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Transistors / RF Power Field-Effect Transistors / A3G26D055NT4
Datasheets
A3G26D055NT4 by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for A3G26D055NT4 by NXP Semiconductors

Results Overview of A3G26D055NT4 by NXP Semiconductors

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A3G26D055NT4 Information

A3G26D055NT4 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for A3G26D055NT4

Part # Distributor Description Stock Price Buy
DISTI # 83AH7881
Newark Airfast Rf Power Gan Amplifier, 100-2690 Mhz, 8 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp A3G26D055NT4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 400 $18.0600
$18.0600 Buy Now
DISTI # 568-A3G26D055NT4CT-ND
DigiKey RF MOSFET GAN 48V 6DFN Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1861
In Stock
  • 1 $30.9000
  • 10 $25.0030
  • 25 $23.5292
  • 100 $23.2147
  • 2,500 $18.9662
$18.9662 / $30.9000 Buy Now
DISTI # A3G26D055NT4
Avnet Americas - Tape and Reel (Alt: A3G26D055NT4) Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $18.5104
  • 5,000 $18.3581
  • 10,000 $18.2061
  • 15,000 $18.0545
  • 20,000 $17.9032
$17.9032 / $18.5104 Buy Now
DISTI # 771-A3G26D055NT4
Mouser Electronics GaN FETs Airfast RF Power GaN Amplifier, 100-2690 MHz, 8 W Avg., 48 V RoHS: Compliant 2603
  • 1 $30.5000
  • 10 $25.0100
  • 25 $23.5300
  • 100 $21.9100
  • 250 $21.1400
  • 1,000 $21.1300
  • 2,500 $18.6300
$18.6300 / $30.5000 Buy Now
DISTI # 86923513
Verical Trans RF MOSFET 125V 6-Pin DFN EP T/R RoHS: Compliant Min Qty: 3 Package Multiple: 1 Americas - 470
  • 3 $25.3000
$25.3000 Buy Now
DISTI # A3G26D055NT4
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 475
  • 1 $24.5600
  • 10 $23.8100
  • 25 $23.1000
  • 50 $22.1100
$22.1100 / $24.5600 Buy Now
DISTI # A3G26D055NT4
Avnet Silica (Alt: A3G26D055NT4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now
DISTI # A3G26D055NT4
EBV Elektronik (Alt: A3G26D055NT4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now

Part Details for A3G26D055NT4

A3G26D055NT4 CAD Models

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A3G26D055NT4 Part Data Attributes

Parametric Data
A3G26D055NT4 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
A3G26D055NT4 NXP Semiconductors RF Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 18 Weeks
Samacsys Manufacturer NXP
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

A3G26D055NT4 Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a dedicated thermal layer is recommended.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design guidelines, use a heat sink if necessary, and consider derating the device's power consumption. Additionally, ensure that the device is operated within its specified temperature range.

  • The recommended soldering conditions for the A3G26D055NT4 involve using a soldering iron with a temperature of 250°C to 260°C, and a soldering time of 3 to 5 seconds. It's also essential to follow the recommended soldering profile to prevent damage to the device.

  • To troubleshoot EMI issues, start by ensuring that the device is properly shielded, and the PCB layout is optimized for EMI reduction. Use EMI filters, and consider adding shielding components such as ferrite beads or common-mode chokes. Also, ensure that the device is operated within its specified frequency range.

  • Operating the device beyond its specified voltage range can lead to reduced reliability, increased power consumption, and potentially even device failure. It's essential to ensure that the device is operated within its specified voltage range to maintain optimal performance and reliability.

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