Part Details for A3G18H500-04SR3 by NXP Semiconductors
Results Overview of A3G18H500-04SR3 by NXP Semiconductors
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Medical Imaging
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Healthcare
Communication and Networking
Entertainment and Gaming
Robotics and Drones
A3G18H500-04SR3 Information
A3G18H500-04SR3 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for A3G18H500-04SR3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33AC4339
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Newark | Airfast Rf Power Ldmos Transistor, 1805-2200 Mhz, 107 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp A3G18H500-04SR3 RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$114.1100 | Buy Now |
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DISTI #
65101447
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Verical | RF Power GaN FET Transistor RoHS: Compliant Min Qty: 1 Package Multiple: 1 | Americas - 118 |
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$148.6000 | Buy Now |
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Rochester Electronics | Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 250 |
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$93.8300 / $117.2900 | Buy Now |
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DISTI #
A3G18H500-04SR3
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Avnet Silica | Power LDMOS Transistor NChannel 48V 107W 4Pin NI780S TR (Alt: A3G18H500-04SR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 | Silica - 0 |
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Buy Now | |
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DISTI #
A3G18H500-04SR3
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EBV Elektronik | Power LDMOS Transistor NChannel 48V 107W 4Pin NI780S TR (Alt: A3G18H500-04SR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 250 |
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RFQ |
Part Details for A3G18H500-04SR3
A3G18H500-04SR3 CAD Models
A3G18H500-04SR3 Part Data Attributes
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A3G18H500-04SR3
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
A3G18H500-04SR3
NXP Semiconductors
RF Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | NXP | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
A3G18H500-04SR3 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN11538, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The A3G18H500-04SR3 has a high power dissipation, so thermal management is crucial. NXP recommends using a heat sink, thermal interface material, and a PCB design that allows for good airflow. The application note AN11538 provides more detailed guidelines.
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The A3G18H500-04SR3 has an operating temperature range of -40°C to 150°C, but the maximum junction temperature (Tj) should not exceed 150°C. It's essential to ensure proper thermal management to prevent overheating.
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The selection of input and output capacitors depends on the specific application and operating conditions. NXP recommends using low-ESR capacitors with a voltage rating of at least 50V and a capacitance value of 10uF to 100uF. The application note AN11538 provides more detailed guidelines.
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The recommended input voltage range for the A3G18H500-04SR3 is 12V to 18V, with a typical input voltage of 15V. Operating outside this range may affect the device's performance and reliability.