Datasheets
A2T21H140-24SR3 by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for A2T21H140-24SR3 by NXP Semiconductors

Results Overview of A2T21H140-24SR3 by NXP Semiconductors

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Applications Education and Research Industrial Automation Aerospace and Defense Agriculture Technology Renewable Energy Robotics and Drones

A2T21H140-24SR3 Information

A2T21H140-24SR3 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for A2T21H140-24SR3

Part # Distributor Description Stock Price Buy
DISTI # 85AK8103
Newark Airfast Rf Power Ldmos Transistor 2110-2170 Mhz, 36 W Avg., 28 V/ Reel Rohs Compliant: Yes |Nxp A2T21H140-24SR3 RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $45.4000
$45.4000 Buy Now
DISTI # 54694051
Verical Trans RF MOSFET N-CH 65V 7-Pin CFMF T/R RoHS: Compliant Min Qty: 2 Package Multiple: 1 Americas - 105
  • 2 $57.7500
$57.7500 Buy Now
Rochester Electronics Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V RoHS: Compliant Status: Obsolete Min Qty: 1 1750
  • 25 $45.4800
  • 100 $43.2100
  • 500 $40.9300
  • 1,000 $38.6600
  • 10,000 $36.3800
$36.3800 / $45.4800 Buy Now
DISTI # A2T21H140-24SR3
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 105
  • 1 $56.1000
  • 10 $54.3800
  • 25 $52.7500
  • 50 $50.4900
$50.4900 / $56.1000 Buy Now
DISTI # A2T21H140-24SR3
EBV Elektronik RF Power Transistor LDMOS Dual NCH 65V 6Pin CFM TR (Alt: A2T21H140-24SR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 EBV - 0
Buy Now

Part Details for A2T21H140-24SR3

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A2T21H140-24SR3 Part Data Attributes

A2T21H140-24SR3 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
A2T21H140-24SR3 NXP Semiconductors RF Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 4 Weeks
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

A2T21H140-24SR3 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the application note AN11542, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.

  • The input capacitor selection depends on the input voltage, current, and frequency. NXP recommends using a low-ESR capacitor with a value between 10uF to 22uF, and a voltage rating of at least 25V. Refer to the application note AN11542 for more details.

  • The maximum allowed voltage drop across the A2T21H140-24SR3 is 1.5V. Exceeding this voltage drop may affect the device's performance and reliability.

  • To ensure EMC, follow the guidelines in the application note AN11542, which includes recommendations for PCB layout, component selection, and shielding. Additionally, consider using a common-mode choke and a filter capacitor to reduce electromagnetic interference (EMI).

  • The A2T21H140-24SR3 has an internal overcurrent protection (OCP) feature that limits the output current during a short-circuit event. The device will automatically shut down and restart once the short-circuit condition is removed.

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