Part Details for A2T09VD300NR1 by NXP Semiconductors
Results Overview of A2T09VD300NR1 by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
A2T09VD300NR1 Information
A2T09VD300NR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for A2T09VD300NR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AK8097
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Newark | Airfast, Rf Power Ldmos Transistor, 720-960 Mhz, 80 W Avg., 48 V/Reel Rohs Compliant: Yes |Nxp A2T09VD300NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$42.5400 | Buy Now |
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Rochester Electronics | Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 2500 |
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$37.5000 / $46.8800 | Buy Now |
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DISTI #
A2T09VD300NR1
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EBV Elektronik | Power LDMOS Transistor NChannel 105V 6Pin TO270WB TR (Alt: A2T09VD300NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | EBV - 0 |
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Buy Now |
Part Details for A2T09VD300NR1
A2T09VD300NR1 CAD Models
A2T09VD300NR1 Part Data Attributes
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A2T09VD300NR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
A2T09VD300NR1
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Finish | Tin (Sn) | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
A2T09VD300NR1 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN11555, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The input capacitor selection depends on the input voltage, frequency, and ripple current. NXP recommends using a low-ESR capacitor with a value between 10uF to 22uF, and a voltage rating of at least 25V. Refer to the application note AN11555 for more details.
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The maximum allowed voltage drop across the A2T09VD300NR1 is 0.5V. Exceeding this voltage drop may affect the device's performance and reliability.
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The device requires a bias voltage of 5V to 12V on the VCC pin, and a bias current of 1mA to 5mA. Ensure the bias voltage is stable and within the recommended range to maintain optimal performance.
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The recommended operating temperature range for the A2T09VD300NR1 is -40°C to 150°C. Operating the device outside this range may affect its performance and reliability.