Part Details for A2I25D012GNR1 by NXP Semiconductors
Results Overview of A2I25D012GNR1 by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
A2I25D012GNR1 Information
A2I25D012GNR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for A2I25D012GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AK8089
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Newark | Airfast Rf Power Ldmos Transistor, 2300-2690 Mhz, 1.3 W Avg., 28 V/Reel Rohs Compliant: Yes |Nxp A2I25D012GNR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$39.5200 | Buy Now |
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Rochester Electronics | A2I25D012 - Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 2500 |
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$34.8400 / $43.5500 | Buy Now |
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DISTI #
A2I25D012GNR1
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EBV Elektronik | Transistor RF FET 65V 2100MHz to 2900MHz 15Pin TO270WBG TR (Alt: A2I25D012GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 | EBV - 0 |
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Buy Now |
Part Details for A2I25D012GNR1
A2I25D012GNR1 CAD Models
A2I25D012GNR1 Part Data Attributes
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A2I25D012GNR1
NXP Semiconductors
Buy Now
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Compare Parts:
A2I25D012GNR1
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.33.00.01 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Finish | Tin (Sn) | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
A2I25D012GNR1 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout and thermal management guide in their application note AN12273. It's essential to follow these guidelines to ensure optimal performance, especially for high-frequency and high-power applications.
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NXP recommends using an external overvoltage protection (OVP) circuit, such as a voltage supervisor or a dedicated OVP IC, to protect the device from voltage transients and surges. The OVP circuit should be designed to trigger at a voltage slightly above the maximum recommended operating voltage.
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The maximum allowed junction temperature for the A2I25D012GNR1 is 150°C. However, it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
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The A2I25D012GNR1 is not designed for use in high-humidity environments. NXP recommends using a moisture-sensitive device (MSD) classification of 3 or lower, which means the device should be stored and operated in an environment with a relative humidity below 60%.
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To ensure EMC, follow NXP's guidelines for PCB layout, component selection, and shielding. Additionally, consider using electromagnetic interference (EMI) filters, such as common-mode chokes or ferrite beads, to reduce emissions and susceptibility.