Part Details for 2SK3479 by Renesas Electronics Corporation
Results Overview of 2SK3479 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
2SK3479 Information
2SK3479 by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SK3479
2SK3479 CAD Models
2SK3479 Part Data Attributes
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2SK3479
Renesas Electronics Corporation
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Datasheet
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2SK3479
Renesas Electronics Corporation
83A, 100V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | MP-25, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 422 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 83 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 332 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3479
This table gives cross-reference parts and alternative options found for 2SK3479. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3479, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2SK3479 | NEC Electronics Group | Check for Price | Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN | 2SK3479 vs 2SK3479 |
| 2SK3479-AZ | Renesas Electronics Corporation | Check for Price | Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab, MP-25, /Bag | 2SK3479 vs 2SK3479-AZ |