Part Details for 2SK2009(TE85L,F) by Toshiba America Electronic Components
Results Overview of 2SK2009(TE85L,F) by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
2SK2009(TE85L,F) Information
2SK2009(TE85L,F) by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SK2009(TE85L,F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AK1273
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Newark | Mosfet, N-Ch, 30V, 0.2A, To-236Mod, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:2.5V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Toshiba 2SK2009(TE85L, F) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1601 |
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$0.1830 / $0.2160 | Buy Now |
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DISTI #
88077925
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Verical | Trans MOSFET N-CH Si 30V 0.2A 3-Pin S-Mini T/R RoHS: Compliant Min Qty: 158 Package Multiple: 1 Date Code: 2415 | Americas - 2141 |
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$0.2850 / $0.6240 | Buy Now |
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DISTI #
2SK2009(TE85L,F)
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Avnet Asia | Trans MOSFET N-CH 30V 0.2A 3-Pin TO-236MOD Embossed T/R (Alt: 2SK2009(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
2SK2009(TE85L,F)
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2141 |
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$0.1590 / $0.6240 | Buy Now |
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DISTI #
2SK2009(TE85L,F)
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EBV Elektronik | (Alt: 2SK2009(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for 2SK2009(TE85L,F)
2SK2009(TE85L,F) CAD Models
2SK2009(TE85L,F) Part Data Attributes
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2SK2009(TE85L,F)
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SK2009(TE85L,F)
Toshiba America Electronic Components
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.2 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
2SK2009(TE85L,F) Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2SK2009 is -55°C to 150°C.
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The recommended storage temperature range for the 2SK2009 is -55°C to 150°C.
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Yes, the 2SK2009 is RoHS (Restriction of Hazardous Substances) compliant.
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The typical turn-on time for the 2SK2009 is around 10-20 ns.
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Yes, the 2SK2009 can be used in high-frequency applications up to 100 kHz.