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Part Details for 2SK1317-E by Renesas Electronics Corporation
Results Overview of 2SK1317-E by Renesas Electronics Corporation
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SK1317-E Information
2SK1317-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SK1317-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
67AH3713
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Newark | Mosfet, N-Ch, 1.5Kv, 2.5A, To-3P, Channel Type:N Channel, Drain Source Voltage Vds:1.5Kv, Continuous Drain Current Id:2.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:15V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Renesas 2SK1317-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 374 |
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$3.7900 / $6.5900 | Buy Now |
|
DISTI #
2SK1317-E-ND
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DigiKey | MOSFET N-CH 1500V 2.5A TO3P Min Qty: 1 Lead time: 18 Weeks Container: Tube |
3447 In Stock |
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$11.8300 | Buy Now |
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DISTI #
2SK1317-E
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Avnet Americas | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P - Rail/Tube (Alt: 2SK1317-E) RoHS: Compliant Min Qty: 330 Package Multiple: 30 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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$12.6180 | Buy Now |
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DISTI #
968-2SK1317-E
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Mouser Electronics | MOSFETs NCH PWR MOSFET 1500V 2.5A 12000MOHM TO3P RoHS: Compliant | 87585 |
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$11.3600 / $13.7100 | Buy Now |
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DISTI #
2SK1317
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TME | Transistor: N-MOSFET, unipolar, 1500V, 2.5A, 100W, TO3P Min Qty: 1 | 0 |
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$4.2100 / $6.0300 | RFQ |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 1500V, 2.5A, 100W, TO3P | 76 |
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Buy Now RFQ | |
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DISTI #
2SK1317-E
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Avnet Asia | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P (Alt: 2SK1317-E) RoHS: Compliant Min Qty: 330 Package Multiple: 30 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
2SK1317-E
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Avnet Silica | Trans MOSFET NCH 15KV 25A 3Pin3Tab TO3P (Alt: 2SK1317-E) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 20 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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New Advantage Corporation | TO-3P 1500VNCH, <PKG>TO-3P, <VDSS>1500V, ID(DC)2.5A, <RDS(ON)MAX(OHM)>12OHM RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 3230 |
|
$4.7500 / $5.1300 | Buy Now |
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Vyrian | Transistors | 15071 |
|
RFQ |
Part Details for 2SK1317-E
2SK1317-E CAD Models
2SK1317-E Part Data Attributes
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2SK1317-E
Renesas Electronics Corporation
Buy Now
Datasheet
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2SK1317-E
Renesas Electronics Corporation
Nch Single Power Mosfet 1500V 2.5A 12000Mohm To-3P, TO-3P, /Tube
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
| Part Package Code | TO-3P | |
| Package Description | SC-65, TO-3P, 3 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | PRSS0004ZE | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 7 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |