Datasheets
2SJ553STR-E by: Renesas Electronics Corporation

Pch Single Power Mosfet -60V -30A 37Mohm LDPAK(S)-(1)/To-263, LDPAK(S)-(1), /Embossed Tape

Part Details for 2SJ553STR-E by Renesas Electronics Corporation

Results Overview of 2SJ553STR-E by Renesas Electronics Corporation

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2SJ553STR-E Information

2SJ553STR-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SJ553STR-E

Part # Distributor Description Stock Price Buy
Win Source Electronics Trans MOSFET P-CH 3-Pin(2+Tab) LDPAK(S)-1 T/R 5000
  • 50 $1.2520
  • 115 $1.0268
  • 175 $0.9956
  • 240 $0.9633
  • 315 $0.9309
  • 415 $0.8351
$0.8351 / $1.2520 Buy Now

Part Details for 2SJ553STR-E

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2SJ553STR-E Part Data Attributes

2SJ553STR-E Renesas Electronics Corporation
Buy Now Datasheet
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2SJ553STR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -30A 37Mohm LDPAK(S)-(1)/To-263, LDPAK(S)-(1), /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code LDPAK(S)-(1)
Package Description SC-83, LDPAK-3
Pin Count 4
Manufacturer Package Code PRSS0004AE
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

2SJ553STR-E Related Parts

2SJ553STR-E Frequently Asked Questions (FAQ)

  • Renesas provides a recommended PCB layout in their application note (APN) for the 2SJ553STR-E, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.

  • The 2SJ553STR-E requires a specific biasing scheme to operate within its recommended operating conditions. Renesas provides a recommended biasing circuit in their datasheet and application notes, which includes the use of external resistors and capacitors to set the gate-source voltage and ensure stable operation.

  • Operating the 2SJ553STR-E beyond its recommended operating conditions can lead to reduced reliability, decreased performance, and potentially even device failure. Renesas provides guidelines for derating the device's performance under extreme temperatures, voltage, and current conditions in their datasheet and application notes.

  • Renesas provides troubleshooting guidelines in their application notes and technical support resources, which include steps to identify and resolve common issues such as overheating, malfunction, or unexpected behavior. These resources may include debugging techniques, fault diagnosis, and repair or replacement procedures.

  • The 2SJ553STR-E is RoHS-compliant and meets various environmental and regulatory standards, such as REACH and JIG. Renesas provides information on the device's environmental and regulatory compliance in their datasheet and product documentation, which should be reviewed and considered during the design process.

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