Part Details for 2SJ552L-E by Renesas Electronics Corporation
Results Overview of 2SJ552L-E by Renesas Electronics Corporation
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2SJ552L-E Information
2SJ552L-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SJ552L-E
2SJ552L-E CAD Models
2SJ552L-E Part Data Attributes
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2SJ552L-E
Renesas Electronics Corporation
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Datasheet
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2SJ552L-E
Renesas Electronics Corporation
Pch Single Power Mosfet -60V -20A 55Mohm LDPAK(L)/To-262, LDPAK(L), /Tube
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
| Part Package Code | LDPAK(L) | |
| Package Description | LDPAK-3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | PRSS0004AE | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2SJ552L-E Frequently Asked Questions (FAQ)
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Renesas provides a recommended PCB layout for the 2SJ552L-E in their application note AN14452. It suggests using a thermal pad on the bottom of the package, and connecting it to a large copper area on the PCB to dissipate heat efficiently.
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To ensure proper biasing during startup, it's recommended to use a soft-start circuit to slowly ramp up the voltage and current to the device. This can be achieved using an external voltage regulator or a dedicated soft-start IC.
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The maximum allowed power dissipation for the 2SJ552L-E is dependent on the ambient temperature and the thermal resistance of the PCB. According to the datasheet, the maximum power dissipation is 2.5W at an ambient temperature of 25°C. However, this value can be derated based on the actual operating conditions.
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Yes, the 2SJ552L-E is qualified for automotive and high-reliability applications. Renesas provides a separate datasheet for the automotive-grade version of the device, which includes additional information on its reliability and qualification.
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The 2SJ552L-E has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding straps, and ionizers to minimize the risk of ESD damage.