Part Details for 2SJ550STL-E by Renesas Electronics Corporation
Results Overview of 2SJ550STL-E by Renesas Electronics Corporation
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2SJ550STL-E Information
2SJ550STL-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SJ550STL-E
2SJ550STL-E CAD Models
2SJ550STL-E Part Data Attributes
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2SJ550STL-E
Renesas Electronics Corporation
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Datasheet
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2SJ550STL-E
Renesas Electronics Corporation
Pch Single Power Mosfet -60V -15A 95Mohm LDPAK(S)-(1)/To-263, LDPAK(S)-(1), /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | LDPAK(S)-(1) | |
| Package Description | SC-83, LDPAK-3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | PRSS0004AE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2SJ550STL-E Frequently Asked Questions (FAQ)
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Renesas provides a recommended PCB layout for the 2SJ550STL-E in their application note AN18491, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
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The 2SJ550STL-E requires a specific biasing scheme to operate within its recommended operating conditions. Renesas provides a detailed biasing circuit diagram and guidelines in their datasheet and application notes, which should be carefully followed to ensure optimal performance and reliability.
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To prevent overheating, it is essential to monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) during operation. Renesas recommends using thermal monitoring ICs or thermistors to track the device's temperature and adjust the operating conditions accordingly.
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Renesas recommends following standard ESD protection guidelines, including using ESD-sensitive handling procedures, ESD-protected workstations, and ESD-protection devices such as TVS diodes or ESD arrays to prevent damage to the device during handling and assembly.
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Renesas recommends storing the 2SJ550STL-E in a dry, cool place, away from direct sunlight and moisture. The device should be handled with ESD-sensitive precautions, and the package should not be exposed to mechanical stress or bending.