Part Details for 2SD2012 by Toshiba America Electronic Components
Results Overview of 2SD2012 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SD2012 Information
2SD2012 by Toshiba America Electronic Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SD2012
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB | 929 |
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$1.0755 / $2.8680 | Buy Now |
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Quest Components | TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB | 99 |
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$0.3000 / $0.4500 | Buy Now |
Part Details for 2SD2012
2SD2012 CAD Models
2SD2012 Part Data Attributes
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2SD2012
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SD2012
Toshiba America Electronic Components
TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, 2-10R1A, 3 PIN, BIP General Purpose Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-67 | |
| Package Description | 2-10R1A, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 25 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 3 MHz | |
| VCEsat-Max | 1 V |
Alternate Parts for 2SD2012
This table gives cross-reference parts and alternative options found for 2SD2012. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SD2012, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2SD812 | Panasonic Electronic Components | Check for Price | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220(A), 3 PIN | 2SD2012 vs 2SD812 |
2SD2012 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the 2SD2012 is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
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While the 2SD2012 is a general-purpose transistor, it's not recommended for high-frequency switching applications due to its relatively high transition frequency (ft) of 30MHz. For high-frequency applications, consider using a transistor with a higher ft rating.
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To ensure reliable operation of the 2SD2012 in high-temperature environments, make sure to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature (Tj) below the maximum rating of 150°C.
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Yes, the 2SD2012 can be used as a switch in a linear power supply, but it's essential to ensure that the transistor is operated within its safe operating area (SOA) to prevent overheating and damage. Also, consider using a transistor with a higher current rating if the power supply requires high current output.
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The recommended storage temperature range for the 2SD2012 is -40°C to 100°C. Storing the transistor outside this range may affect its reliability and performance.