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Part Details for 2SD2012 by STMicroelectronics
Results Overview of 2SD2012 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SD2012 Information
2SD2012 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SD2012
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB | 14 |
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$1.2327 / $2.0545 | Buy Now |
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DISTI #
2SD2012
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Avnet Silica | Trans GP BJT NPN 60V 3A 3Pin3Tab TO220F Tube (Alt: 2SD2012) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | TRANS NPN 60V 3A TO220F | 5000 |
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RFQ | |
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Win Source Electronics | TRANS NPN 60V 3A TO220F | 40000 |
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$0.1513 / $0.1954 | Buy Now |
Part Details for 2SD2012
2SD2012 CAD Models
2SD2012 Part Data Attributes
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2SD2012
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
2SD2012
STMicroelectronics
3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220F, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 25 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 3 MHz |
Alternate Parts for 2SD2012
This table gives cross-reference parts and alternative options found for 2SD2012. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SD2012, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| KSD1406 | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | 2SD2012 vs KSD1406 |
2SD2012 Frequently Asked Questions (FAQ)
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The 2SD2012 is a low-frequency transistor, and its maximum operating frequency is typically around 100 kHz to 200 kHz. However, this can vary depending on the specific application and circuit design.
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To ensure the 2SD2012 transistor is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.7V, and the collector-emitter voltage (Vce) is around 1-2V. You should also ensure that the transistor is operated within its recommended operating conditions, such as current and power dissipation.
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The maximum power dissipation of the 2SD2012 transistor is around 1W. However, this can vary depending on the specific application and operating conditions. It's essential to ensure that the transistor is operated within its recommended power dissipation to prevent overheating and damage.
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While the 2SD2012 transistor can be used in switching applications, it's not the most suitable choice due to its relatively slow switching speed and high saturation voltage. For switching applications, it's recommended to use a transistor with faster switching speeds and lower saturation voltage, such as a MOSFET or a high-speed bipolar transistor.
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To protect the 2SD2012 transistor from overheating, ensure that it is operated within its recommended power dissipation and that the ambient temperature is within the recommended range. You can also use a heat sink to dissipate heat, and ensure good airflow around the transistor. Additionally, consider using a thermal protection circuit to detect overheating and shut down the transistor if necessary.