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Part Details for 2SC5415AE-TD-E by onsemi
Results Overview of 2SC5415AE-TD-E by onsemi
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2SC5415AE-TD-E Information
2SC5415AE-TD-E by onsemi is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SC5415AE-TD-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2SC5415AE-TD-E
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Avnet Americas | Trans GP BJT NPN 12V 0.1A 4-Pin(3+Tab) PCP T/R - Tape and Reel (Alt: 2SC5415AE-TD-E) RoHS: Compliant Min Qty: 2977 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 0 |
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$0.2100 / $0.2240 | Buy Now |
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Bristol Electronics | 300 |
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RFQ | ||
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Quest Components | 240 |
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$0.3968 / $0.7935 | Buy Now | |
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Rochester Electronics | 2SC5415A - RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz RoHS: Compliant Status: Obsolete Min Qty: 1 | 325 |
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$0.1680 / $0.2710 | Buy Now |
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DISTI #
2SC5415AE-TD-E
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Avnet Silica | Trans GP BJT NPN 12V 01A 4Pin3Tab PCP TR (Alt: 2SC5415AE-TD-E) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | Silica - 1000 |
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Buy Now | |
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DISTI #
2SC5415AE-TD-E
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EBV Elektronik | Trans GP BJT NPN 12V 01A 4Pin3Tab PCP TR (Alt: 2SC5415AE-TD-E) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 6049 |
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RFQ |
Part Details for 2SC5415AE-TD-E
2SC5415AE-TD-E CAD Models
2SC5415AE-TD-E Part Data Attributes
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2SC5415AE-TD-E
onsemi
Buy Now
Datasheet
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Compare Parts:
2SC5415AE-TD-E
onsemi
RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz, SOT-89 / PCP-1, 1000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-89 / PCP-1 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 419AU | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| JESD-609 Code | e6 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Finish | TIN BISMUTH | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
2SC5415AE-TD-E Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the 2SC5415AE-TD-E is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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The 2SC5415AE-TD-E is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for thermal derating information.
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To ensure linear operation, the 2SC5415AE-TD-E should be biased with a collector-emitter voltage (Vce) between 2V and 10V, and a base-emitter voltage (Vbe) between 0.6V and 1.2V. The recommended bias current is 1mA to 10mA.
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The 2SC5415AE-TD-E has a transition frequency (fT) of 30MHz, making it suitable for low-to-medium frequency applications. For high-frequency applications, consider using a transistor with a higher fT rating.
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While the 2SC5415AE-TD-E can be used as a switch, it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). Consider using a transistor specifically designed for switching applications.