Part Details for 2SA1797 by Galaxy Microelectronics
Results Overview of 2SA1797 by Galaxy Microelectronics
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2SA1797 Information
2SA1797 by Galaxy Microelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2SA1797
2SA1797 CAD Models
2SA1797 Part Data Attributes
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2SA1797
Galaxy Microelectronics
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Datasheet
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2SA1797
Galaxy Microelectronics
General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 2A; HFE Min: 82; HFE Max: 270; VCE (V): 2V; IC (mA): 500mA; VCE(SAT) (V): 0.35V; IC (mA)1: 1000mA; IB (mA): 50mA; FT Min (MHz): 200+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Part Package Code | SOT-89 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 82 | |
| JESD-30 Code | R-PSSO-F3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz |