Part Details for 2N7002W-G by Comchip Technology Corporation Ltd
Results Overview of 2N7002W-G by Comchip Technology Corporation Ltd
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Energy and Power Systems
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2N7002W-G Information
2N7002W-G by Comchip Technology Corporation Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002W-G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-2N7002W-GCT-ND
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DigiKey | MOSFET N-CH 60V 0.115A SOT323 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1961 In Stock |
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$0.0414 / $0.3500 | Buy Now |
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DISTI #
750-2N7002W-G
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Mouser Electronics | MOSFETs MOSFET N-CH 60V 0.25A RoHS: Compliant | 1807 |
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$0.0410 / $0.3600 | Buy Now |
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NAC | Transistor RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.0450 / $0.1100 | Buy Now |
Part Details for 2N7002W-G
2N7002W-G CAD Models
2N7002W-G Part Data Attributes
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2N7002W-G
Comchip Technology Corporation Ltd
Buy Now
Datasheet
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Compare Parts:
2N7002W-G
Comchip Technology Corporation Ltd
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | COMCHIP TECHNOLOGY CO LTD | |
| Package Description | SOT-323, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | Comchip Technology | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Reference Standard | MIL-STD-750 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002W-G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N7002W-G is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
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To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) within the recommended range of 0V to 60V. Additionally, ensure the gate current (Ig) is within the specified range of ±100nA.
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The maximum power dissipation of the 2N7002W-G is 1.4W, but this value can be derated based on the operating temperature and package type. Consult the datasheet for specific derating curves.
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While the 2N7002W-G can operate at high frequencies, its performance may degrade above 100MHz due to internal capacitances and resistances. For high-frequency applications, consider using a more specialized MOSFET or evaluating the device's performance through simulation and testing.
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To protect the 2N7002W-G from ESD, handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment. Additionally, consider adding ESD protection circuits or devices in the application circuit.