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Part Details for 2N7002V by onsemi
Results Overview of 2N7002V by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002V Information
2N7002V by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002V
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84W8891
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Newark | Mosfet, Dual N Channel, 60V, 1.6Ohm, 280Ma, Sot-563F-6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:280Ma, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi 2N7002V RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2975 |
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$0.1100 | Buy Now |
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DISTI #
12N0102
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Newark | Transistor, mosfet, matched Pair, n-Channel,60V V(Br)Dss,280Ma I(D),sot-563F Rohs Compliant: Yes |Onsemi 2N7002V RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1280 / $0.1960 | Buy Now |
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DISTI #
2N7002VCT-ND
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DigiKey | MOSFET 2N-CH 60V 0.28A SOT563F Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
30377 In Stock |
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$0.1236 / $0.6200 | Buy Now |
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DISTI #
2N7002V
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.28A 6-Pin SOT-563F T/R - Tape and Reel (Alt: 2N7002V) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 3000 |
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RFQ | |
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DISTI #
84W8891
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.28A 6-Pin SOT-563F T/R - Product that comes on tape, but is not reeled (Alt: 84W8891) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 69 Weeks, 4 Days Container: Ammo Pack | 2975 Partner Stock |
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$0.2270 / $0.5500 | Buy Now |
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DISTI #
512-2N7002V
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Mouser Electronics | MOSFETs N-Chan Enhancement Mode Field Effect RoHS: Compliant | 8600 |
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$0.1270 / $0.5300 | Buy Now |
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DISTI #
E02:0323_00842535
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Arrow Electronics | Trans MOSFET N-CH 60V 0.28A 6-Pin SOT-563 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Date Code: 2509 | Europe - 99000 |
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$0.1206 / $0.1479 | Buy Now |
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DISTI #
V36:1790_06298065
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Arrow Electronics | Trans MOSFET N-CH 60V 0.28A 6-Pin SOT-563 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Date Code: 2403 | Americas - 93000 |
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$0.0862 / $0.1057 | Buy Now |
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Onlinecomponents.com | Transistor MOSFET Array Dual N-CH 60V 0.28A 6-Pin SOT-563F T/R RoHS: Compliant | 0 |
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$0.1167 / $0.1336 | Buy Now |
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DISTI #
14343525
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Verical | Trans MOSFET N-CH 60V 0.28A 6-Pin SOT-563 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | Americas - 99000 |
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$0.1212 / $0.1487 | Buy Now |
Part Details for 2N7002V
2N7002V CAD Models
2N7002V Part Data Attributes
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2N7002V
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7002V
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω, SOT-563, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-563 | |
| Package Description | ROHS COMPLIANT, ULTRA SMALL PACKAGE-6 | |
| Manufacturer Package Code | 419BH | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 69 Weeks, 4 Days | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.28 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002V
This table gives cross-reference parts and alternative options found for 2N7002V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002VA | Rochester Electronics LLC | Check for Price | 280mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, ULTRA SMALL PACKAGE-6 | 2N7002V vs 2N7002VA |
2N7002V Frequently Asked Questions (FAQ)
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The 2N7002V is a low-power, low-voltage MOSFET, and its operating frequency is limited by its internal capacitances and resistances. While there is no specific maximum operating frequency specified in the datasheet, it is generally suitable for low-frequency applications up to a few hundred kHz.
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To ensure the 2N7002V is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage. Additionally, the gate drive circuit should be able to provide sufficient current to charge the gate capacitance quickly.
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The thermal resistance of the 2N7002V is not explicitly specified in the datasheet. However, the thermal resistance of a similar device, the 2N7000, is around 200°C/W. As a rough estimate, the thermal resistance of the 2N7002V is likely to be in the same range.
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While the 2N7002V can be used as a switch, it is not suitable for high-current applications due to its limited current rating (maximum continuous drain current is 115mA). For high-current applications, a more suitable device with a higher current rating should be chosen.
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To protect the 2N7002V from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to ensure that the device is stored in an anti-static package. Additionally, ESD protection devices such as TVS diodes can be used to protect the device from ESD events.