Part Details for 2N7002T/R by NXP Semiconductors
Results Overview of 2N7002T/R by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002T/R Information
2N7002T/R by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002T/R
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236AB | 1627 |
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$0.0300 / $0.0800 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236AB | 960 |
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$0.2340 / $0.5850 | Buy Now |
Part Details for 2N7002T/R
2N7002T/R CAD Models
2N7002T/R Part Data Attributes
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2N7002T/R
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
2N7002T/R
NXP Semiconductors
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT-23 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002T/R
This table gives cross-reference parts and alternative options found for 2N7002T/R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002T/R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002 | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002T/R vs 2N7002 |
| 2N7002 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002T/R vs 2N7002 |
| 2N7002KA | KEC | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002T/R vs 2N7002KA |
| 2N7002LT1 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | 2N7002T/R vs 2N7002LT1 |
| 2N7002/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002T/R vs 2N7002/T3 |
| 2N7002T | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | 2N7002T/R vs 2N7002T |
| 2N7002LT1H | onsemi | Check for Price | 75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 2N7002T/R vs 2N7002LT1H |
| 2N7002KA | NXP Semiconductors | Check for Price | TRANSISTOR 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002T/R vs 2N7002KA |
| 2N7002TA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002T/R vs 2N7002TA |
| 2N7002T/R | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002T/R vs 2N7002T/R |
2N7002T/R Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002T/R is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
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To ensure the 2N7002T/R is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will result in a low drain-source resistance (Rds(on)) and maximum current handling.
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The maximum current rating for the 2N7002T/R is 500mA, but it's recommended to derate the current based on the operating temperature and PCB layout to ensure reliable operation.
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While the 2N7002T/R can be used as a switch, it's not recommended for high-frequency signals (>100kHz) due to its relatively high gate-drain capacitance (Cgd) and gate-source capacitance (Cgs), which can cause signal distortion and ringing.
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To protect the 2N7002T/R from ESD, use proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection devices, such as TVS diodes, in the circuit design.