Part Details for 2N7002P by NXP Semiconductors
Results Overview of 2N7002P by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002P Information
2N7002P by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002P
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 83130 |
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RFQ | ||
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Bristol Electronics | Min Qty: 27 | 605 |
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$0.0562 / $0.1875 | Buy Now |
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Quest Components | 360 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 61301 |
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$0.0450 / $0.3000 | Buy Now |
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Quest Components | 360 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 800 |
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$0.0500 / $0.2500 | Buy Now |
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Quest Components | 360 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 484 |
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$0.0750 / $0.2500 | Buy Now |
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ComSIT USA | 60 V, 360 MILLI AMP N-CHANNEL TRENCH MOSFET Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 548 |
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RFQ | |
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Win Source Electronics | MOSFET 2N-CH 60V 0.32A 6TSSOP / Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 | 765000 |
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$0.0163 / $0.0210 | Buy Now |
Part Details for 2N7002P
2N7002P CAD Models
2N7002P Part Data Attributes
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2N7002P
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
2N7002P
NXP Semiconductors
360mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOT-23 | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.36 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7002P
This table gives cross-reference parts and alternative options found for 2N7002P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N7002K | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | 2N7002P vs 2N7002K |
2N7002KHE3-TP | Micro Commercial Components | Check for Price | Small Signal Field-Effect Transistor, 0.34A I(D), 60V, | 2N7002P vs 2N7002KHE3-TP |
2N7002KT1H | onsemi | Check for Price | 320mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 2N7002P vs 2N7002KT1H |
2N7002KQ-7 | Diodes Incorporated | $0.0335 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 2N7002P vs 2N7002KQ-7 |
2N7002KC | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Small Signal Field-Effect Transistor, | 2N7002P vs 2N7002KC |
2N7002K_R2_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N7002P vs 2N7002K_R2_00001 |
2N7002K-T1 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2N7002P vs 2N7002K-T1 |
2N7002K | Rectron Semiconductor | Check for Price | Small Signal Field-Effect Transistor | 2N7002P vs 2N7002K |
2N7002K_R1_00501 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, | 2N7002P vs 2N7002K_R1_00501 |
2N7002P Frequently Asked Questions (FAQ)
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The 2N7002P is a low-power, low-voltage N-channel MOSFET, and it's not designed for high-frequency operation. However, it can be used in switching applications up to 100 kHz. For higher frequencies, a different device may be more suitable.
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To ensure SOA compliance, you should ensure that the device is operated within the specified voltage and current ratings. You should also consider the thermal characteristics, such as junction temperature and thermal resistance, to prevent overheating. Additionally, you can use simulation tools or consult with an experienced engineer to ensure SOA compliance.
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While the 2N7002P can be used as a switch, it's not suitable for high-current applications due to its limited current rating (maximum drain current of 500 mA). For high-current applications, a different device with a higher current rating should be used.
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To minimize power losses, you should ensure that the device is operated at a low duty cycle, and the switching frequency is as low as possible. You can also consider using a gate driver with a low output impedance to reduce switching losses. Additionally, you can use a Schottky diode in parallel with the MOSFET to reduce reverse recovery losses.
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The 2N7002P is rated for operation up to 150°C, but it's not recommended to operate the device at the maximum temperature rating continuously. You should ensure that the device is operated within the specified temperature range, and consider using a heat sink or other cooling measures to prevent overheating.