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60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002P,235 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 360MA, 60V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB | 1280 |
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$0.0378 / $0.1260 | Buy Now |
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Quest Components | 360MA, 60V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB | 680 |
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$0.0750 / $0.2500 | Buy Now |
|
Vyrian | Transistors | 181105 |
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RFQ |
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2N7002P,235
NXP Semiconductors
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Datasheet
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2N7002P,235
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-236 | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Samacsys Manufacturer | NXP | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.36 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7002P,235. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002P,235, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
2N7002K | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | 2N7002P,235 vs 2N7002K |
2N7002K | onsemi | Check for Price | N-Channel Small Signal MOSFET 60V 380mA 1.6 Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL | 2N7002P,235 vs 2N7002K |
2N7002K | Rectron Semiconductor | Check for Price | Small Signal Field-Effect Transistor | 2N7002P,235 vs 2N7002K |
2N7002K | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 2N7002P,235 vs 2N7002K |
2N7002K3 | Formosa Microsemi Co Ltd | Check for Price | Small Signal Field-Effect Transistor, | 2N7002P,235 vs 2N7002K3 |
2N7002K | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | 2N7002P,235 vs 2N7002K |
2N7002K | Micro Commercial Components | Check for Price | Small Signal Field-Effect Transistor, 0.34A I(D), 60V, | 2N7002P,235 vs 2N7002K |
2N7002K | Continental Device India Ltd | Check for Price | Small Signal Field-Effect Transistor, | 2N7002P,235 vs 2N7002K |
2N7002KQ-13 | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 2N7002P,235 vs 2N7002KQ-13 |
2N7002K-C | Secos Corporation | Check for Price | Small Signal Field-Effect Transistor | 2N7002P,235 vs 2N7002K-C |
The maximum operating frequency of the 2N7002P,235 is typically up to 100 kHz, but it can be used at higher frequencies with proper design and layout considerations.
To ensure the 2N7002P,235 is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and ensure the drain-source voltage (Vds) is within the recommended operating range.
The maximum power dissipation of the 2N7002P,235 is 1.4W, but this can be increased with proper heat sinking and thermal management.
Yes, the 2N7002P,235 can be used as a switch in high-current applications, but ensure the drain-source current (Id) does not exceed the maximum rating of 1.5A, and consider using a heat sink to prevent overheating.
To protect the 2N7002P,235 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure the PCB has proper ESD protection circuits.