Part Details for 2N7002LT3 by onsemi
Results Overview of 2N7002LT3 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002LT3 Information
2N7002LT3 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002LT3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N7002LT3
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Avnet Americas | - Tape and Reel (Alt: 2N7002LT3) RoHS: Not Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 9275 |
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RFQ | ||
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Bristol Electronics | 200 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236AB | 7420 |
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$0.0450 / $0.1500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236AB | 160 |
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$0.2250 / $0.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236AB | 61 |
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$0.0600 | Buy Now |
Part Details for 2N7002LT3
2N7002LT3 CAD Models
2N7002LT3 Part Data Attributes
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2N7002LT3
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7002LT3
onsemi
115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 | |
Package Description | CASE 318-08, TO-236, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 318-08 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7002LT3
This table gives cross-reference parts and alternative options found for 2N7002LT3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002LT3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N7002 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | 2N7002LT3 vs 2N7002 |
2N7002TRL13 | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002LT3 vs 2N7002TRL13 |
2N7002D87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002LT3 vs 2N7002D87Z |
2N7002T,215 | Nexperia | Check for Price | 2N7002T - N-channel TrenchMOS logic level FET@en-us TO-236 3-Pin | 2N7002LT3 vs 2N7002T,215 |
RK7002T116 | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SST, 3 PIN | 2N7002LT3 vs RK7002T116 |
2N7002LT1 | Motorola Mobility LLC | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN | 2N7002LT3 vs 2N7002LT1 |
2N7002 | Lite-On Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002LT3 vs 2N7002 |
2N7002T | Secos Corporation | Check for Price | Small Signal Field-Effect Transistor, | 2N7002LT3 vs 2N7002T |
2N7002 | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002LT3 vs 2N7002 |
2N7002LT3 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002LT3 vs 2N7002LT3 |
2N7002LT3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002LT3 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure the 2N7002LT3 is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will minimize the on-state resistance (Rds(on)) and ensure maximum current flow.
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The maximum current rating for the 2N7002LT3 is 500mA, but it's recommended to operate within 200mA to ensure reliable operation and minimize thermal stress.
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To protect the 2N7002LT3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.
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While the 2N7002LT3 can be used as a switch, it's not recommended for high-frequency circuits (>100kHz) due to its relatively high gate capacitance (Ciss) and gate-drain capacitance (Cgd). This can lead to increased power losses and reduced switching performance.