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115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002LT1 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N7002LT1
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Avnet Americas | - Tape and Reel (Alt: 2N7002LT1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 25947 |
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RFQ | ||
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Bristol Electronics | 23838 |
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RFQ | ||
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Bristol Electronics | 15100 |
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RFQ | ||
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Bristol Electronics | 11241 |
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RFQ | ||
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Bristol Electronics | 2980 |
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RFQ | ||
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Bristol Electronics | Min Qty: 45 | 1682 |
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$0.0188 / $0.1125 | Buy Now |
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Quest Components | 115 MA, 60 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 | 14788 |
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$0.0300 / $0.1500 | Buy Now |
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Quest Components | 115 MA, 60 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 | 11480 |
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$0.3000 / $1.0000 | Buy Now |
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Quest Components | 115 MA, 60 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236 | 4109 |
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$0.0450 / $0.1500 | Buy Now |
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2N7002LT1
onsemi
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Datasheet
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2N7002LT1
onsemi
115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 | |
Package Description | CASE 318-08, TO-236, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 318-08 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the 2N7002LT1 is -55°C to 150°C.
The 2N7002LT1 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
The maximum current rating for the 2N7002LT1 is 500 mA.
Yes, the 2N7002LT1 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The typical gate threshold voltage for the 2N7002LT1 is around 2.5V.