Part Details for 2N7002LT1 by Motorola Mobility LLC
Results Overview of 2N7002LT1 by Motorola Mobility LLC
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002LT1 Information
2N7002LT1 by Motorola Mobility LLC is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002LT1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 17 |
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RFQ |
Part Details for 2N7002LT1
2N7002LT1 CAD Models
2N7002LT1 Part Data Attributes
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2N7002LT1
Motorola Mobility LLC
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Datasheet
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2N7002LT1
Motorola Mobility LLC
115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 318-08 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002LT1
This table gives cross-reference parts and alternative options found for 2N7002LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | 2N7002LT1 vs 2N7002 |
| 2N7002TRL13 | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002LT1 vs 2N7002TRL13 |
| 2N7002D87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002LT1 vs 2N7002D87Z |
| 2N7002T,215 | Nexperia | Check for Price | 2N7002T - N-channel TrenchMOS logic level FET@en-us TO-236 3-Pin | 2N7002LT1 vs 2N7002T,215 |
| RK7002T116 | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SST, 3 PIN | 2N7002LT1 vs RK7002T116 |
| 2N7002 | Lite-On Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002LT1 vs 2N7002 |
| 2N7002T | Secos Corporation | Check for Price | Small Signal Field-Effect Transistor, | 2N7002LT1 vs 2N7002T |
| 2N7002 | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002LT1 vs 2N7002 |
| 2N7002LT3 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002LT1 vs 2N7002LT3 |
| 2N7002T | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | 2N7002LT1 vs 2N7002T |
2N7002LT1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002LT1 is -55°C to 150°C.
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The 2N7002LT1 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the 2N7002LT1 is 500mA.
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Yes, the 2N7002LT1 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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No, the 2N7002LT1 is not suitable for linear amplifier circuits due to its low threshold voltage and high drain-source resistance.