-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for 2N7002KQBZ by Nexperia
Results Overview of 2N7002KQBZ by Nexperia
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002KQBZ Information
2N7002KQBZ by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002KQBZ
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85AJ7193
|
Newark | Mosfet, N-Ch, 60V, 0.72A, Dfn1110D, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:720Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Nexperia 2N7002KQBZ RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 694 |
|
$0.0620 | Buy Now |
|
DISTI #
86AK6736
|
Newark | Mosfet, N-Ch, 60V, 0.72A, Dfn1110D Rohs Compliant: Yes |Nexperia 2N7002KQBZ RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0720 / $0.0860 | Buy Now |
|
DISTI #
1727-2N7002KQBZCT-ND
|
DigiKey | 2N7002KQB/SOT8015/DFN1110D-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
23812 In Stock |
|
$0.0445 / $0.3400 | Buy Now |
|
DISTI #
2N7002KQBZ
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 720 mA, 0.635 ohm, DFN1110D, Surface Mount - Tape and Reel (Alt: 2N7002KQBZ) RoHS: Compliant Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0384 / $0.0418 | Buy Now |
|
DISTI #
771-2N7002KQBZ
|
Mouser Electronics | MOSFETs 60 V, single N-channel Trench MOSFET RoHS: Compliant | 10427 |
|
$0.0460 / $0.3000 | Buy Now |
|
DISTI #
E02:0323_17844038
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.72A Automotive AEC-Q101 3-Pin DFN-D T/R RoHS: Compliant Min Qty: 20000 Package Multiple: 5000 Lead time: 8 Weeks Date Code: 2437 | Europe - 20000 |
|
$0.0441 / $0.0499 | Buy Now |
|
DISTI #
V72:2272_26321277
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.72A Automotive AEC-Q101 3-Pin DFN-D T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2217 Container: Cut Strips | Americas - 7868 |
|
$0.0428 / $0.1426 | Buy Now |
|
DISTI #
84745959
|
Verical | Trans MOSFET N-CH 60V 0.72A Automotive AEC-Q101 3-Pin DFN-D T/R RoHS: Compliant Min Qty: 20000 Package Multiple: 20000 Date Code: 2437 | Americas - 20000 |
|
$0.0443 / $0.0502 | Buy Now |
|
DISTI #
61700753
|
Verical | Trans MOSFET N-CH 60V 0.72A Automotive AEC-Q101 3-Pin DFN-D T/R RoHS: Compliant Min Qty: 138 Package Multiple: 1 Date Code: 2217 | Americas - 7868 |
|
$0.0428 / $0.0545 | Buy Now |
|
DISTI #
2N7002KQBZ
|
TTI | MOSFETs 60 V, single N-channel Trench MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 15000 Package Multiple: 5000 Container: Reel | Americas - 0 |
|
$0.0420 / $0.0460 | Buy Now |
Part Details for 2N7002KQBZ
2N7002KQBZ CAD Models
2N7002KQBZ Part Data Attributes
|
|
2N7002KQBZ
Nexperia
Buy Now
Datasheet
|
Compare Parts:
2N7002KQBZ
Nexperia
2N7002KQB - 60 V N-channel Trench MOSFET@en-us
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SOT-8015, DFN1110D-3, 3 PIN | |
| Manufacturer Package Code | SOT8015 | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 1.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.72 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3 pF | |
| JEDEC-95 Code | MO-340BA | |
| JESD-30 Code | R-PDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4.2 W | |
| Pulsed Drain Current-Max (IDM) | 2.9 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002KQBZ Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the 2N7002KQBZ is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
-
To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) within the recommended range of 0V to 60V. Also, ensure the gate current (Ig) is within the specified range of ±100nA.
-
For optimal thermal management, use a PCB layout with a large copper area connected to the drain pin to dissipate heat. Also, ensure good thermal conductivity between the device and the PCB by using a thermal interface material (TIM) and a heat sink if necessary.
-
To protect the 2N7002KQBZ from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection components such as TVS diodes or ESD protection arrays.
-
Store the 2N7002KQBZ in a dry, cool place away from direct sunlight and moisture. Handle the device with care to avoid mechanical stress, and avoid exposing it to extreme temperatures or humidity during storage or transportation.