Datasheets
2N7002KDW-AU_R1_000A1 by:

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

Part Details for 2N7002KDW-AU_R1_000A1 by PanJit Semiconductor

Results Overview of 2N7002KDW-AU_R1_000A1 by PanJit Semiconductor

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2N7002KDW-AU_R1_000A1 Information

2N7002KDW-AU_R1_000A1 by PanJit Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
ADS1000A1QDBVRQ1 Texas Instruments Automotive, 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator &amp; I<sup>2</sup>C 6-SOT-23 -40 to 125
ADS1000A1IDBVR Texas Instruments 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator &amp; I<sup>2</sup>C 6-SOT-23 -40 to 125
ADS1000A1IDBVTG4 Texas Instruments 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator &amp; I<sup>2</sup>C 6-SOT-23 -40 to 125

Price & Stock for 2N7002KDW-AU_R1_000A1

Part # Distributor Description Stock Price Buy
DISTI # 241-2N7002KDWAUR1000
Mouser Electronics MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant 7573
  • 1 $0.2800
  • 10 $0.1740
  • 100 $0.1090
  • 500 $0.0720
  • 1,000 $0.0600
  • 3,000 $0.0490
  • 6,000 $0.0360
  • 9,000 $0.0280
  • 24,000 $0.0270
$0.0270 / $0.2800 Buy Now
DISTI # 2N7002KDW-AU-R1
TME Transistor: N-MOSFET x2, unipolar, 60V, 250mA, Idm: 1A, 350mW Min Qty: 1 3496
  • 1 $0.2154
  • 10 $0.1611
  • 100 $0.0670
  • 250 $0.0562
  • 500 $0.0506
  • 1,000 $0.0469
  • 3,000 $0.0374
  • 9,000 $0.0355
$0.0355 / $0.2154 Buy Now
NAC 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Container: Reel 0
  • 30,000 $0.0220
  • 120,000 $0.0210
  • 480,000 $0.0190
$0.0190 / $0.0220 Buy Now
DISTI # 2N7002KDW-AU_R1_000A1
Avnet Silica (Alt: 2N7002KDW-AU_R1_000A1) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days Silica - 0
Buy Now

Part Details for 2N7002KDW-AU_R1_000A1

2N7002KDW-AU_R1_000A1 CAD Models

2N7002KDW-AU_R1_000A1 Part Data Attributes

2N7002KDW-AU_R1_000A1 PanJit Semiconductor
Buy Now Datasheet
Compare Parts:
2N7002KDW-AU_R1_000A1 PanJit Semiconductor Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Package Description GREEN, PLASTIC PACKAGE-6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer PANJIT
Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.115 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

2N7002KDW-AU_R1_000A1 Related Parts

2N7002KDW-AU_R1_000A1 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the 2N7002KDW-AU_R1_000A1 is -55°C to 150°C.

  • The 2N7002KDW-AU_R1_000A1 is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.

  • The maximum safe operating area (SOA) for the 2N7002KDW-AU_R1_000A1 is typically defined by the manufacturer as the maximum voltage and current that the device can handle without damage, and is usually provided in the datasheet or application notes.

  • Yes, the 2N7002KDW-AU_R1_000A1 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • No, the 2N7002KDW-AU_R1_000A1 is not a radiation-hardened device, and it is not suitable for use in high-radiation environments such as space or nuclear applications.

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