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Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002KDW-AU_R1_000A1 by PanJit Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-2N7002KDWAUR1000
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Mouser Electronics | MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant | 7573 |
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$0.0270 / $0.2800 | Buy Now |
DISTI #
2N7002KDW-AU-R1
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TME | Transistor: N-MOSFET x2, unipolar, 60V, 250mA, Idm: 1A, 350mW Min Qty: 1 | 3496 |
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$0.0355 / $0.2154 | Buy Now |
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NAC | 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.0190 / $0.0220 | Buy Now |
DISTI #
2N7002KDW-AU_R1_000A1
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Avnet Silica | (Alt: 2N7002KDW-AU_R1_000A1) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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2N7002KDW-AU_R1_000A1
PanJit Semiconductor
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Datasheet
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2N7002KDW-AU_R1_000A1
PanJit Semiconductor
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Package Description | GREEN, PLASTIC PACKAGE-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended operating temperature range for the 2N7002KDW-AU_R1_000A1 is -55°C to 150°C.
The 2N7002KDW-AU_R1_000A1 is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
The maximum safe operating area (SOA) for the 2N7002KDW-AU_R1_000A1 is typically defined by the manufacturer as the maximum voltage and current that the device can handle without damage, and is usually provided in the datasheet or application notes.
Yes, the 2N7002KDW-AU_R1_000A1 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
No, the 2N7002KDW-AU_R1_000A1 is not a radiation-hardened device, and it is not suitable for use in high-radiation environments such as space or nuclear applications.