Part Details for 2N7002KC by Yangzhou Yangjie Electronics Co Ltd
Results Overview of 2N7002KC by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N7002KC Information
2N7002KC by Yangzhou Yangjie Electronics Co Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N7002KC
2N7002KC CAD Models
2N7002KC Part Data Attributes
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2N7002KC
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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2N7002KC
Yangzhou Yangjie Electronics Co Ltd
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.3 W | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002KC
This table gives cross-reference parts and alternative options found for 2N7002KC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002KC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002K-T1-E3 | Vishay Intertechnologies | $0.0871 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | 2N7002KC vs 2N7002K-T1-E3 |
| 2N7002KT/R7 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | 2N7002KC vs 2N7002KT/R7 |
| 2N7002KT-TP | Micro Commercial Components | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, | 2N7002KC vs 2N7002KT-TP |
| 2N7002KX-7 | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, | 2N7002KC vs 2N7002KX-7 |
| 2N7002KT7G | onsemi | Check for Price | N-Channel Small Signal MOSFET 60V 380mA 1.6 Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL | 2N7002KC vs 2N7002KT7G |
| 2N7002P | Nexperia | Check for Price | Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 2N7002KC vs 2N7002P |
2N7002KC Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N7002KC is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
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To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) within the recommended range of 0V to 60V. Additionally, ensure the gate current (Ig) is within the specified range of ±100nA.
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The maximum power dissipation for the 2N7002KC is 1.4W, but this can be affected by the operating temperature and the thermal resistance of the package. Be sure to check the thermal derating curve in the datasheet to ensure safe operation.
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While the 2N7002KC can be used as a switch, its high-frequency performance is limited by its relatively high gate capacitance (Ciss) and output capacitance (Coss). For high-frequency applications, consider using a MOSFET with lower capacitance values.
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To protect the 2N7002KC from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to your design.