Datasheets
2N7002K_R1_00001 by:

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for 2N7002K_R1_00001 by PanJit Semiconductor

Results Overview of 2N7002K_R1_00001 by PanJit Semiconductor

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2N7002K_R1_00001 Information

2N7002K_R1_00001 by PanJit Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
CO-059BNCX200-001 Amphenol Cables on Demand Amphenol CO-059BNCX200-001 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 1ft
CO-058SMAX200-001 Amphenol Cables on Demand Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft
CS-USBAA00000-001 Amphenol Cables on Demand Amphenol CS-USBAA00000-001 Molded USB 2.0 Cable - Type A-A 1m

Price & Stock for 2N7002K_R1_00001

Part # Distributor Description Stock Price Buy
DISTI # 241-2N7002K_R1_00001
Mouser Electronics MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant 222581
  • 1 $0.1200
  • 10 $0.0830
  • 100 $0.0430
  • 1,000 $0.0370
  • 3,000 $0.0200
  • 6,000 $0.0190
  • 9,000 $0.0180
$0.0180 / $0.1200 Buy Now
DISTI # 68393856
Verical N-channel Enhancement Mode MOSFET Min Qty: 3000 Package Multiple: 3000 Americas - 6000
  • 3,000 $0.0427
$0.0427 Buy Now
Bristol Electronics   633000
RFQ
DISTI # 2N7002K-R1
TME Transistor: N-MOSFET, unipolar, 60V, 300mA, Idm: 2A, 500mW, SOT23 Min Qty: 1 10580
  • 1 $0.1072
  • 10 $0.0702
  • 100 $0.0375
  • 1,000 $0.0321
  • 3,000 $0.0255
  • 6,000 $0.0232
  • 9,000 $0.0209
  • 75,000 $0.0180
  • 99,000 $0.0175
  • 150,000 $0.0167
$0.0167 / $0.1072 Buy Now
NAC 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.0250
$0.0250 Buy Now
Chip 1 Exchange INSTOCK 94854
RFQ
DISTI # 2N7002K_R1_00001
Avnet Asia Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R (Alt: 2N7002K_R1_00001) RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # 2N7002K_R1_00001
Avnet Silica Transistor MOSFET NCH 60V 03A 3Pin SOT23 TR (Alt: 2N7002K_R1_00001) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 32 Weeks, 0 Days Silica - 6000
Buy Now

Part Details for 2N7002K_R1_00001

2N7002K_R1_00001 CAD Models

2N7002K_R1_00001 Part Data Attributes

2N7002K_R1_00001 PanJit Semiconductor
Buy Now Datasheet
Compare Parts:
2N7002K_R1_00001 PanJit Semiconductor Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer PANJIT
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.35 W
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N7002K_R1_00001

This table gives cross-reference parts and alternative options found for 2N7002K_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002K_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N7002K-T1-E3 Vishay Intertechnologies $0.0871 Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN 2N7002K_R1_00001 vs 2N7002K-T1-E3
2N7002KT/R7 PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 2N7002K_R1_00001 vs 2N7002KT/R7
2N7002KT-TP Micro Commercial Components Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2N7002K_R1_00001 vs 2N7002KT-TP
2N7002KX-7 Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 2N7002K_R1_00001 vs 2N7002KX-7
2N7002KT7G onsemi Check for Price N-Channel Small Signal MOSFET 60V 380mA 1.6 Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL 2N7002K_R1_00001 vs 2N7002KT7G
2N7002P Nexperia Check for Price Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB 2N7002K_R1_00001 vs 2N7002P
Part Number Manufacturer Composite Price Description Compare
2N7002KQ-7 Diodes Incorporated $0.0335 Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 2N7002K_R1_00001 vs 2N7002KQ-7
2N7002K Yangzhou Yangjie Electronics Co Ltd Check for Price Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2N7002K_R1_00001 vs 2N7002K
2N7002K-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE PACKAGE-3, FET General Purpose Small Signal 2N7002K_R1_00001 vs 2N7002K-T1-E3
2N7002K Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 2N7002K_R1_00001 vs 2N7002K
2N7002K PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 2N7002K_R1_00001 vs 2N7002K
2N7002KB Suzhou Good-Ark Electronics Co Ltd Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 2N7002K_R1_00001 vs 2N7002KB
2N7002K HY Electronic Corp Check for Price Small Signal Field-Effect Transistor 2N7002K_R1_00001 vs 2N7002K
2N7002K Formosa Microsemi Co Ltd Check for Price Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 2N7002K_R1_00001 vs 2N7002K
2N7002K-C Secos Corporation Check for Price Small Signal Field-Effect Transistor 2N7002K_R1_00001 vs 2N7002K-C
2N7002K Nexperia Check for Price Small Signal Field-Effect Transistor 2N7002K_R1_00001 vs 2N7002K

2N7002K_R1_00001 Related Parts

2N7002K_R1_00001 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002K_R1_00001 is -55°C to 150°C.

  • Yes, the 2N7002K_R1_00001 is suitable for high-frequency applications up to 4 GHz due to its low capacitance and high switching speed.

  • The maximum current rating for the 2N7002K_R1_00001 is 500 mA.

  • The 2N7002K_R1_00001 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The typical turn-on and turn-off time for the 2N7002K_R1_00001 is around 10-20 ns.

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