-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for 2N7002H6327XTSA2 by Infineon Technologies AG
Results Overview of 2N7002H6327XTSA2 by Infineon Technologies AG
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002H6327XTSA2 Information
2N7002H6327XTSA2 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002H6327XTSA2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
47Y8193
|
Newark | Mosfet, N-Ch, 60V, 0.3A, 150Deg C, 0.5W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:300Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Infineon 2N7002H6327XTSA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 122494 |
|
$0.0340 | Buy Now |
|
DISTI #
86AK6733
|
Newark | Mosfet, N-Ch, 60V, 0.3A, Sot-23 Rohs Compliant: Yes |Infineon 2N7002H6327XTSA2 RoHS: Compliant Min Qty: 24000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0270 / $0.0290 | Buy Now |
|
DISTI #
2N7002H6327XTSA2CT-ND
|
DigiKey | MOSFET N-CH 60V 300MA SOT23-3 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
127931 In Stock |
|
$0.0252 / $0.1400 | Buy Now |
|
DISTI #
47Y8193
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 47Y8193) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack | 8117 Partner Stock |
|
$0.0530 / $0.1560 | Buy Now |
|
DISTI #
2N7002H6327XTSA2
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002H6327XTSA2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.0198 / $0.0211 | Buy Now |
|
DISTI #
726-2N7002H6327XTSA2
|
Mouser Electronics | MOSFETs N-Ch 60V 300mA SOT-23-3 RoHS: Compliant | 451661 |
|
$0.0250 / $0.1700 | Buy Now |
|
DISTI #
E02:0323_07107332
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2444 | Europe - 57000 |
|
$0.0195 | Buy Now |
|
DISTI #
V79:2366_27167542
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2214 | Americas - 35685 |
|
$0.0238 | Buy Now |
|
DISTI #
V72:2272_06391413
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2208 Container: Cut Strips | Americas - 18963 |
|
$0.0321 / $0.0868 | Buy Now |
|
DISTI #
V36:1790_06391413
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2332 | Americas - 3000 |
|
$0.0218 / $0.0318 | Buy Now |
Part Details for 2N7002H6327XTSA2
2N7002H6327XTSA2 CAD Models
2N7002H6327XTSA2 Part Data Attributes
|
|
2N7002H6327XTSA2
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
2N7002H6327XTSA2
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002H6327XTSA2 Frequently Asked Questions (FAQ)
-
The recommended operating temperature range for the 2N7002H6327XTSA2 is -40°C to 150°C.
-
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
-
The 2N7002H6327XTSA2 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures to prevent damage during handling and assembly.
-
Yes, the 2N7002H6327XTSA2 is suitable for high-frequency applications up to 1 GHz, but it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
-
To minimize parasitic effects, it's recommended to follow good PCB design practices, such as using a solid ground plane, minimizing trace lengths, and using shielding and filtering techniques.