Part Details for 2N7002H6327 by Infineon Technologies AG
Results Overview of 2N7002H6327 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002H6327 Information
2N7002H6327 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002H6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 15000 |
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RFQ | ||
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Quest Components | 12000 |
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$0.0560 / $0.2800 | Buy Now | |
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Quest Components | 5780 |
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$0.0560 / $0.2800 | Buy Now | |
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ComSIT USA | OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1651 |
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RFQ |
Part Details for 2N7002H6327
2N7002H6327 CAD Models
2N7002H6327 Part Data Attributes
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2N7002H6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
2N7002H6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002H6327
This table gives cross-reference parts and alternative options found for 2N7002H6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002H6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 2N7002H6327 vs 2N7002 |
2N7002H6327 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the 2N7002H6327 is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure proper thermal management, it is recommended to use a thermal pad or heat sink with a thermal resistance of less than 10°C/W, and to keep the ambient temperature below 150°C.
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The maximum allowed voltage on the gate of the 2N7002H6327 is ±20V, but it is recommended to keep the gate voltage between -5V and +15V for reliable operation.
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Yes, the 2N7002H6327 can be used as a switch in high-frequency applications up to 100kHz, but it is recommended to use a gate driver with a rise and fall time of less than 10ns to minimize switching losses.
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To protect the 2N7002H6327 from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures.