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Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002H-7 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30AK0334
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Newark | Mosfet, N-Ch, 60V, 0.17A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002H-7 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2565 |
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$0.0590 / $0.1540 | Buy Now |
DISTI #
2N7002H-7DICT-ND
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DigiKey | MOSFET N-CH 60V 170MA SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2354 In Stock |
|
$0.0250 / $0.1400 | Buy Now |
DISTI #
2N7002H-7
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Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002H-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 1185000 Factory Stock |
|
$0.0196 / $0.0209 | Buy Now |
DISTI #
621-2N7002H-7
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Mouser Electronics | MOSFETs 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA RoHS: Compliant | 47784 |
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$0.0270 / $0.1400 | Buy Now |
DISTI #
E02:0323_09045641
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Arrow Electronics | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2332 | Europe - 18000 |
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$0.0223 | Buy Now |
DISTI #
V72:2272_06685888
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Arrow Electronics | Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 2656 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2328 Container: Cut Strips | Americas - 2576 |
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$0.0218 | Buy Now |
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Future Electronics | N-Channel 60 V 170 mA 370 mW Enhancement Mode Surface Mount Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.0199 / $0.0216 | Buy Now |
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Future Electronics | N-Channel 60 V 170 mA 370 mW Enhancement Mode Surface Mount Mosfet - SOT-23 Min Qty: 3000 Package Multiple: 3000 |
6000 null |
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$0.0199 / $0.0216 | Buy Now |
DISTI #
2N7002H-7
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TME | Transistor: N-MOSFET, unipolar, 60V, 0.21A, 0.37W, SOT23 Min Qty: 1 | 11430 |
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$0.0264 / $0.2332 | Buy Now |
DISTI #
2N7002H-7
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Avnet Silica | Transistor MOSFET NCH 60V 02A 3Pin SOT23 TR (Alt: 2N7002H-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
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Buy Now |
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2N7002H-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
2N7002H-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the 2N7002H-7 is -55°C to 150°C.
Yes, the 2N7002H-7 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The maximum drain-source voltage rating for the 2N7002H-7 is 60V.
Yes, the 2N7002H-7 is AEC-Q101 qualified, making it suitable for use in automotive applications.
The typical on-state resistance of the 2N7002H-7 is around 2.5 ohms.