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Part Details for 2N7002ET7G by onsemi
Results Overview of 2N7002ET7G by onsemi
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002ET7G Information
2N7002ET7G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002ET7G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC3102
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Newark | Mosfet, N-Ch, 60V, 0.26A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:260Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi 2N7002ET7G RoHS: Compliant Min Qty: 10500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0240 / $0.0340 | Buy Now |
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DISTI #
488-2N7002ET7GCT-ND
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DigiKey | MOSFET N-CH 60V 260MA SOT23-3 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
15477 In Stock |
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$0.0194 / $0.1400 | Buy Now |
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DISTI #
2N7002ET7G
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Avnet Americas | Power MOSFET, N Channel, 60 V, 260 mA, 0.86 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: 2N7002ET7G) RoHS: Compliant Min Qty: 45500 Package Multiple: 3500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.0194 / $0.0207 | Buy Now |
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DISTI #
863-2N7002ET7G
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Mouser Electronics | MOSFETs NFET SOT23 60V 115MA 7MO RoHS: Compliant | 459572 |
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$0.0190 / $0.1400 | Buy Now |
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Onlinecomponents.com | N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω RoHS: Compliant |
28000 In Stock |
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$0.0187 / $0.0221 | Buy Now |
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DISTI #
84379285
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Verical | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3500 Package Multiple: 3500 Date Code: 2435 | Americas - 28000 |
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$0.0251 / $0.0275 | Buy Now |
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Bristol Electronics | 6697 |
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RFQ | ||
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Rochester Electronics | 2N7002E - N-Channel Small Signal MOSFET 60V, 310mA RoHS: Compliant Status: Active Min Qty: 1 | 1700 |
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$0.0189 / $0.0305 | Buy Now |
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DISTI #
2N7002ET7G
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TME | Transistor: N-MOSFET, unipolar, 60V, 220mA, Idm: 1.2A, 0.42W, SOT23 Min Qty: 1 | 884 |
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$0.0181 / $0.1656 | Buy Now |
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DISTI #
2N7002ET7G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 35000 | 0 |
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$0.0200 | Buy Now |
Part Details for 2N7002ET7G
2N7002ET7G CAD Models
2N7002ET7G Part Data Attributes
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2N7002ET7G
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7002ET7G
onsemi
N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Date Of Intro | 2019-03-14 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.26 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002ET7G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002ET7G is -55°C to 150°C.
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Yes, the 2N7002ET7G is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The maximum gate-source voltage that can be applied to the 2N7002ET7G is ±20V.
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No, the 2N7002ET7G is not suitable for linear amplifier applications due to its high drain-source resistance and low transconductance.
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Yes, the 2N7002ET7G is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other digital logic device.