Part Details for 2N7002ET3G by onsemi
Results Overview of 2N7002ET3G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002ET3G Information
2N7002ET3G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002ET3G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2N7002ET3G
|
Avnet Americas | - Tape and Reel (Alt: 2N7002ET3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
|
Vyrian | Transistors | 1023 |
|
RFQ |
Part Details for 2N7002ET3G
2N7002ET3G CAD Models
2N7002ET3G Part Data Attributes
|
|
2N7002ET3G
onsemi
Buy Now
Datasheet
|
Compare Parts:
2N7002ET3G
onsemi
N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOT-23 (TO-236) 3 LEAD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.26 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002ET3G
This table gives cross-reference parts and alternative options found for 2N7002ET3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002ET3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002ET1G | onsemi | $0.0694 | N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | 2N7002ET3G vs 2N7002ET1G |
2N7002ET3G Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the 2N7002ET3G is -55°C to 150°C.
-
Yes, the 2N7002ET3G is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
-
The maximum gate-source voltage that can be applied to the 2N7002ET3G is ±20V.
-
No, the 2N7002ET3G is a low-power MOSFET and is not suitable for high-power switching applications. It is intended for low-power, low-voltage applications such as battery-powered devices and low-power motor control.
-
Yes, the 2N7002ET3G is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other logic-level signal source.