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N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002ET1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09R9861
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Newark | N Channel Mosfet, 60V, 310Ma Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:310Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Onsemi 2N7002ET1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6834 |
|
$0.0500 / $0.2020 | Buy Now |
DISTI #
04X9593
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Newark | Mosfet Transistor, N Channel, 310 Ma, 60 V, 0.86 Ohm, 10 V, 1 V Rohs Compliant: Yes |Onsemi 2N7002ET1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0390 / $0.0420 | Buy Now |
DISTI #
2N7002ET1GOSCT-ND
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DigiKey | MOSFET N-CH 60V 260MA SOT23-3 Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
150535 In Stock |
|
$0.0221 / $0.1800 | Buy Now |
DISTI #
2N7002ET1G
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 310 mA, 2.5 Ohm, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: 2N7002ET1G) RoHS: Compliant Min Qty: 45455 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 84000 Partner Stock |
|
$0.0141 / $0.0147 | Buy Now |
DISTI #
2N7002ET1G
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 260 mA, 2.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: 2N7002ET1G) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
2N7002ET1G
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 310 mA, 2.5 Ohm, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: 2N7002ET1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.0221 / $0.0236 | Buy Now |
DISTI #
2N7002ET1G
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 260 mA, 2.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: 2N7002ET1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.0221 / $0.0236 | Buy Now |
DISTI #
09R9861
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 310 mA, 2.5 Ohm, SOT-23 (TO-236), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 09R9861) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 55 Weeks, 2 Days Container: Ammo Pack | 0 |
|
$0.0500 / $0.1480 | Buy Now |
DISTI #
863-2N7002ET1G
|
Mouser Electronics | MOSFETs NFET SOT23 60V 310mA 2.5Ohms RoHS: Compliant | 386191 |
|
$0.0250 / $0.1900 | Buy Now |
DISTI #
V36:1790_07304859
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2436 | Americas - 36000 |
|
$0.0137 / $0.0279 | Buy Now |
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2N7002ET1G
onsemi
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Datasheet
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2N7002ET1G
onsemi
N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Pin Count | 3 | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.26 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the 2N7002ET1G is -55°C to 150°C.
Yes, the 2N7002ET1G is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The maximum current rating for the 2N7002ET1G is 1.5 A.
The 2N7002ET1G is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
The typical threshold voltage for the 2N7002ET1G is around 1.5 V.