Part Details for 2N7002EQ-7-F by Diodes Incorporated
Results Overview of 2N7002EQ-7-F by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N7002EQ-7-F Information
2N7002EQ-7-F by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002EQ-7-F
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-2N7002EQ-7-FTR-ND
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DigiKey | 2N7002 FAMILY SOT23 T&R 3K Min Qty: 3000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0329 / $0.0404 | Buy Now |
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DISTI #
2N7002EQ-7-F
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Avnet Americas | Transistor MOSFET Enhancement Mode N-CH 60V 334mA 3-Pin SOT- 23 T/R - Tape and Reel (Alt: 2N7002EQ-7-F) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 123000 Factory Stock |
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$0.0355 / $0.0363 | Buy Now |
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DISTI #
621-2N7002EQ-7-F
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Mouser Electronics | MOSFETs 2N7002 Family SOT23 T&R 3K RoHS: Compliant | 0 |
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$0.0320 / $0.3500 | Order Now |
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DISTI #
2N7002EQ-7-F
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
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$0.0336 / $0.5335 | RFQ |
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DISTI #
2N7002EQ-7-F
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Avnet Silica | Transistor MOSFET Enhancement Mode NCH 60V 334mA 3Pin SOT 23 TR (Alt: 2N7002EQ-7-F) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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Vyrian | Transistors | 38017 |
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RFQ |
Part Details for 2N7002EQ-7-F
2N7002EQ-7-F CAD Models
2N7002EQ-7-F Part Data Attributes
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2N7002EQ-7-F
Diodes Incorporated
Buy Now
Datasheet
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2N7002EQ-7-F
Diodes Incorporated
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.292 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.8 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.7 W | |
| Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002EQ-7-F Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002EQ-7-F is -55°C to 150°C.
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The 2N7002EQ-7-F is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the 2N7002EQ-7-F is 1.1A, but this is dependent on the operating conditions and the PCB layout.
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The 2N7002EQ-7-F has a relatively high gate capacitance and a moderate switching speed, making it suitable for low-to-medium frequency switching applications up to around 100kHz.
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While the 2N7002EQ-7-F can be used in a linear mode, it is not recommended due to its relatively high Rds(on) and limited thermal performance. A dedicated linear MOSFET or other device would be a better choice for such applications.