Datasheets
2N7002E by:

385mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN

Part Details for 2N7002E by NXP Semiconductors

Results Overview of 2N7002E by NXP Semiconductors

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2N7002E Information

2N7002E by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002E

Part # Distributor Description Stock Price Buy
Bristol Electronics   15000
RFQ
Quest Components SMALL SIGNAL, FET 12000
  • 1 $2.4000
  • 542 $0.9900
  • 1,011 $0.9000
$0.9000 / $2.4000 Buy Now

Part Details for 2N7002E

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2N7002E Part Data Attributes

2N7002E NXP Semiconductors
Buy Now Datasheet
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2N7002E NXP Semiconductors 385mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description PLASTIC, SOT-23, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.385 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.83 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N7002E

This table gives cross-reference parts and alternative options found for 2N7002E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
934056996215 NXP Semiconductors Check for Price 385mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN 2N7002E vs 934056996215
2N7002ET/R NXP Semiconductors Check for Price TRANSISTOR 385 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal 2N7002E vs 2N7002ET/R
Part Number Manufacturer Composite Price Description Compare
2N7002T onsemi $0.1207 N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω, SOT-523FL, 3000-REEL 2N7002E vs 2N7002T
2N7002TT2 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 2N7002E vs 2N7002TT2
2N7002FT/R NXP Semiconductors Check for Price TRANSISTOR 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal 2N7002E vs 2N7002FT/R
2N7002TBT/R7 PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 2N7002E vs 2N7002TBT/R7
2N7002K NXP Semiconductors Check for Price TRANSISTOR 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal 2N7002E vs 2N7002K
2N7002TB PanJit Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 2N7002E vs 2N7002TB
2N7002TT1-2T2 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2N7002E vs 2N7002TT1-2T2
2N7002F,215 Nexperia Check for Price N-channel TrenchMOS logic level FET@en-us TO-236 3-Pin 2N7002E vs 2N7002F,215
2N7002BK,215 NXP Semiconductors Check for Price 2N7002BK - 60 V, 350 mA N-channel Trench MOSFET TO-236 3-Pin 2N7002E vs 2N7002BK,215
2N7002T1 Calogic Inc Check for Price Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2N7002E vs 2N7002T1

2N7002E Related Parts

2N7002E Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002E is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.

  • While the 2N7002E can be used as a switch, it's not ideal for high-frequency signals due to its relatively high capacitance and inductance. For high-frequency applications, consider using a dedicated high-frequency switch or a different MOSFET with lower parasitic capacitance.

  • To ensure the 2N7002E is fully turned on or off, apply a gate-source voltage (Vgs) of at least 4.5V for a logic-level input, and 10V for a standard-level input. Also, ensure the gate drive is strong enough to charge the gate capacitance quickly.

  • The maximum current rating for the 2N7002E is 500mA, but it's recommended to derate the current based on the operating temperature and PCB layout to ensure reliable operation.

  • While the 2N7002E can be used in a linear amplifier circuit, it's not the best choice due to its relatively high drain-source resistance (Rds(on)) and limited linear region. Consider using a dedicated linear amplifier transistor or a MOSFET with a lower Rds(on) and a more linear transfer characteristic.

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