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Transistors / Small Signal Field-Effect Transistors / 2N7002E-T1-GE3
Datasheets
2N7002E-T1-GE3 by:

Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

Part Details for 2N7002E-T1-GE3 by Vishay Intertechnologies

Results Overview of 2N7002E-T1-GE3 by Vishay Intertechnologies

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2N7002E-T1-GE3 Information

2N7002E-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002E-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 15R6203
Newark N-Channel Enhancement-Mode Mosfet |Vishay 2N7002E-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 2N7002E-T1-GE3
Avnet Americas Transistor MOSFET N-CH 60V 0.24A 3-Pin TO-236 T/R - Tape and Reel (Alt: 2N7002E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel 9000
  • 3,000 $0.0705
  • 6,000 $0.0657
  • 12,000 $0.0646
  • 18,000 $0.0635
  • 24,000 $0.0623
$0.0623 / $0.0705 Buy Now
DISTI # 781-2N7002E-GE3
Mouser Electronics MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V RoHS: Compliant 173270
  • 1 $0.4600
  • 10 $0.3480
  • 100 $0.2170
  • 500 $0.1500
  • 1,000 $0.1140
  • 3,000 $0.1050
  • 6,000 $0.0940
  • 9,000 $0.0880
  • 24,000 $0.0820
$0.0820 / $0.4600 Buy Now
DISTI # V36:1790_09215336
Arrow Electronics Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2506 Americas - 69000
  • 3,000 $0.1050
  • 6,000 $0.0940
  • 9,000 $0.0880
  • 15,000 $0.0871
  • 21,000 $0.0862
  • 24,000 $0.0820
  • 30,000 $0.0812
  • 75,000 $0.0804
$0.0804 / $0.1050 Buy Now
DISTI # 87777352
Verical Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2506 Americas - 69000
  • 3,000 $0.1050
  • 6,000 $0.0940
  • 9,000 $0.0880
  • 15,000 $0.0871
  • 21,000 $0.0862
  • 24,000 $0.0820
  • 30,000 $0.0812
  • 75,000 $0.0804
$0.0804 / $0.1050 Buy Now
DISTI # 66386813
Verical Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 427 Package Multiple: 1 Date Code: 2301 Americas - 2660
  • 427 $0.2290
  • 500 $0.1900
  • 1,000 $0.1710
  • 2,000 $0.1600
$0.1600 / $0.2290 Buy Now
DISTI # 2N7002E-T1-GE3
TTI MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 78000
In Stock
  • 3,000 $0.1030
$0.1030 Buy Now
DISTI # 2N7002E-T1-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 0.24A, Idm: 1.3A, 0.22W, SOT23 Min Qty: 1 2870
  • 1 $0.3590
  • 10 $0.3080
  • 25 $0.2190
  • 100 $0.1640
  • 250 $0.1460
  • 500 $0.1310
  • 1,000 $0.1220
  • 3,000 $0.1140
$0.1140 / $0.3590 Buy Now
DISTI # 2N7002E-T1-GE3
Avnet Asia Transistor MOSFET N-CH 60V 0.24A 3-Pin TO-236 T/R (Alt: 2N7002E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 15000
RFQ
DISTI # 2N7002E-T1-GE3
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 2660
  • 5 $0.6330
  • 50 $0.3920
  • 100 $0.2510
  • 200 $0.2290
  • 500 $0.1900
  • 1,000 $0.1710
  • 2,000 $0.1600
  • 3,000 $0.1120
  • 6,000 $0.1100
  • 12,000 $0.1060
$0.1060 / $0.6330 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 168605
  • 3,000 $130.7600
  • 6,000 $232.4600
$130.7600 / $232.4600 Buy Now
Vyrian Transistors 41789
RFQ

Part Details for 2N7002E-T1-GE3

2N7002E-T1-GE3 CAD Models

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2N7002E-T1-GE3 Part Data Attributes

Parametric Data
2N7002E-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
2N7002E-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.24 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N7002E-T1-GE3

This table gives cross-reference parts and alternative options found for 2N7002E-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002E-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N7002-T1-GE3 Vishay Intertechnologies $0.1263 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 2N7002E-T1-GE3 vs 2N7002-T1-GE3
Part Number Manufacturer Composite Price Description Compare
2N7002-T1-E3 Vishay Intertechnologies $0.1104 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN 2N7002E-T1-GE3 vs 2N7002-T1-E3
2N7002E-T1-E3 Vishay Intertechnologies $0.4482 Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN 2N7002E-T1-GE3 vs 2N7002E-T1-E3

2N7002E-T1-GE3 Related Parts

2N7002E-T1-GE3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002E-T1-GE3 is -55°C to 150°C.

  • Yes, the 2N7002E-T1-GE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The maximum drain-source voltage rating for the 2N7002E-T1-GE3 is 20V.

  • No, the 2N7002E-T1-GE3 is a low-power MOSFET and is not suitable for high-power applications. It has a maximum continuous drain current rating of 0.5A.

  • Yes, the 2N7002E-T1-GE3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

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