Part Details for 2N7002E-T1-E3 by Vishay Siliconix
Results Overview of 2N7002E-T1-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002E-T1-E3 Information
2N7002E-T1-E3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002E-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70459644
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RS | MOSFET N-CH 60V 240MA SOT-23 Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.3910 / $0.4600 | RFQ |
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Quest Components | 240 MA, 60 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB | 17732 |
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$0.0922 / $0.2634 | Buy Now |
Part Details for 2N7002E-T1-E3
2N7002E-T1-E3 CAD Models
2N7002E-T1-E3 Part Data Attributes
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2N7002E-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
2N7002E-T1-E3
Vishay Siliconix
TRANSISTOR 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.24 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.35 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7002E-T1-E3
This table gives cross-reference parts and alternative options found for 2N7002E-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002E-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N7002-T1-E3 | Vishay Intertechnologies | $0.1104 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN | 2N7002E-T1-E3 vs 2N7002-T1-E3 |
2N7002E-T1-E3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002E-T1-E3 is -55°C to 150°C.
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Yes, the 2N7002E-T1-E3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The maximum current rating for the 2N7002E-T1-E3 is 1.5 A.
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Yes, the 2N7002E-T1-E3 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The typical threshold voltage for the 2N7002E-T1-E3 is around 2.5 V.