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Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002DWH6327XTSA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH9626
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Newark | Small Signal Mosfets Rohs Compliant: Yes |Infineon 2N7002DWH6327XTSA1 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 672000 |
|
Buy Now | |
DISTI #
47Y8194
|
Newark | Mosfet, Dual N-Ch, 60V, 0.3A, Sot-363, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:300Ma, Continuous Drain Current Id P Channel:300Ma Rohs Compliant: Yes |Infineon 2N7002DWH6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 217 |
|
$0.1600 / $0.2600 | Buy Now |
DISTI #
86AK6728
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Newark | Mosfet, N-Ch, 60V, 0.3A, Sot-363 Rohs Compliant: Yes |Infineon 2N7002DWH6327XTSA1 RoHS: Compliant Min Qty: 15000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0830 | Buy Now |
DISTI #
2N7002DWH6327XTSA1CT-ND
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DigiKey | MOSFET 2N-CH 60V 0.3A SOT363 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
131516 In Stock |
|
$0.0397 / $0.3100 | Buy Now |
DISTI #
2N7002DWH6327XTSA1
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Avnet Americas | MOSFET Array, Dual N Channel, 60 V, 300 mA, 3 Ohm, SOT-363, 6 Pins - Tape and Reel (Alt: 2N7002DWH6327XTSA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 672000 |
|
$0.0317 / $0.0330 | Buy Now |
DISTI #
2N7002DWH6327XTSA1
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Avnet Americas | MOSFET Array, Dual N Channel, 60 V, 300 mA, 3 Ohm, SOT-363, 6 Pins - Tape and Reel (Alt: 2N7002DWH6327XTSA1) RoHS: Compliant Min Qty: 5953 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 15015 Partner Stock |
|
$0.1044 / $0.1111 | Buy Now |
DISTI #
47Y8194
|
Avnet Americas | MOSFET Array, Dual N Channel, 60 V, 300 mA, 3 Ohm, SOT-363, 6 Pins - Product that comes on tape, but is not reeled (Alt: 47Y8194) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 217 Partner Stock |
|
$0.0880 / $0.2500 | Buy Now |
DISTI #
726-2N7002DWH6327XTS
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Mouser Electronics | MOSFETs N-Ch 60V 300mA SOT-363-6 RoHS: Compliant | 181871 |
|
$0.0410 / $0.2700 | Buy Now |
DISTI #
V79:2366_28364533
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Arrow Electronics | Trans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2249 | Americas - 2500 |
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$0.0418 / $0.2700 | Buy Now |
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Future Electronics | Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS™ Small Signal Mosfet - SOT-363 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Container: Reel | 753000Reel |
|
$0.0317 / $0.0341 | Buy Now |
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2N7002DWH6327XTSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
2N7002DWH6327XTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-363, 6 PIN | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.3 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3 pF | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended operating temperature range for the 2N7002DWH6327XTSA1 is -40°C to 150°C.
To ensure reliability in high-temperature applications, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
The maximum allowable power dissipation for the 2N7002DWH6327XTSA1 is 2.5W. Exceeding this limit can lead to device failure.
To prevent electrostatic discharge (ESD) damage, it is recommended to follow proper ESD handling procedures, such as using ESD-safe workstations, wearing ESD-protective clothing, and using ESD-protective packaging.
The recommended storage temperature range for the 2N7002DWH6327XTSA1 is -40°C to 150°C.