Part Details for 2N7002DW-7 by Diodes Incorporated
Results Overview of 2N7002DW-7 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002DW-7 Information
2N7002DW-7 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002DW-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4375 |
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RFQ | ||
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Bristol Electronics | 2737 |
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RFQ | ||
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Quest Components | MOSFET N-CHANEL DUAL 60V SOT-363 | 1392 |
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$0.2640 / $0.6600 | Buy Now |
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Quest Components | MOSFET N-CHANEL DUAL 60V SOT-363 | 40 |
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$0.4500 / $1.0000 | Buy Now |
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Velocity Electronics | Our Stock | 58081 |
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RFQ | |
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Vyrian | Transistors | 1161 |
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RFQ | |
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Win Source Electronics | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET 2N-CH 60V 0.23A SOT-363 | 177000 |
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$0.0266 / $0.0393 | Buy Now |
Part Details for 2N7002DW-7
2N7002DW-7 CAD Models
2N7002DW-7 Part Data Attributes
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2N7002DW-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
2N7002DW-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA SMALL, PLASTIC PACKAGE-6
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-363, 6 PIN | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002DW-7
This table gives cross-reference parts and alternative options found for 2N7002DW-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002DW-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002DW-R1-10001 | PanJit Semiconductor | Check for Price | Transistor | 2N7002DW-7 vs 2N7002DW-R1-10001 |
2N7002DW-7 Frequently Asked Questions (FAQ)
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The 2N7002DW-7 is a low-threshold voltage N-channel MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its switching characteristics, it is suitable for low-frequency applications up to 100 kHz.
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To ensure the 2N7002DW-7 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate drive circuit should be capable of providing a sufficient current to charge the gate capacitance quickly.
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The maximum power dissipation of the 2N7002DW-7 is not explicitly stated in the datasheet. However, based on its thermal resistance and package type, the maximum power dissipation can be estimated to be around 1.5W to 2W, depending on the ambient temperature and heat sinking.
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While the 2N7002DW-7 can handle high currents, its maximum drain current is limited to 1.5A. If your application requires higher currents, you may need to consider a different MOSFET or use multiple 2N7002DW-7 devices in parallel.
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To protect the 2N7002DW-7 from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the pins or leads during handling.