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Part Details for 2N7002BKW by Nexperia
Results Overview of 2N7002BKW by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002BKW Information
2N7002BKW by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N7002BKW
2N7002BKW CAD Models
2N7002BKW Part Data Attributes
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2N7002BKW
Nexperia
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Datasheet
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2N7002BKW
Nexperia
Small Signal Field-Effect Transistor, 0.31A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SC-70, SOT-323, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.31 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.275 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002BKW Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002BKW is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
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To ensure the 2N7002BKW is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will minimize the on-state resistance (Rds(on)) and ensure maximum current handling.
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The maximum current rating for the 2N7002BKW is 500mA, but it's recommended to derate the current to 300mA for continuous operation to ensure reliability and prevent overheating.
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Yes, the 2N7002BKW can be used as a switch for high-frequency signals up to 100MHz, but it's essential to consider the device's parasitic capacitances, inductances, and switching times to ensure proper operation.
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To protect the 2N7002BKW from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is properly grounded during assembly and testing.