Part Details for 2N7002BKW by NXP Semiconductors
Results Overview of 2N7002BKW by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Automotive
2N7002BKW Information
2N7002BKW by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002BKW
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 519 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 310MA SOT323 | 129000 |
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$0.0207 / $0.0310 | Buy Now |
Part Details for 2N7002BKW
2N7002BKW CAD Models
2N7002BKW Part Data Attributes
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2N7002BKW
NXP Semiconductors
Buy Now
Datasheet
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2N7002BKW
NXP Semiconductors
TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SC-70 | |
| Package Description | PLASTIC, SC-70, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.31 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002BKW Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002BKW is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure the 2N7002BKW is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the specified range. Additionally, the gate current (Ig) should be limited to the recommended maximum value to prevent overheating.
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The maximum current rating for the 2N7002BKW is 500mA, as specified in the datasheet. However, it's recommended to operate the device within a current range of 100mA to 300mA for optimal performance and reliability.
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To protect the 2N7002BKW from ESD, it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package or bag when not in use.
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Yes, the 2N7002BKW can be used as a switch in high-frequency applications up to 100MHz. However, it's recommended to consider the device's switching characteristics, such as rise and fall times, and ensure that the device is properly biased and terminated to prevent oscillations.