Part Details for 2N7002BKV by NXP Semiconductors
Results Overview of 2N7002BKV by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Automotive
2N7002BKV Information
2N7002BKV by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002BKV
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 741 |
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RFQ | |
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Win Source Electronics | MOSFET 2N-CH 60V 0.34A SOT666 | 11230 |
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$0.0415 / $0.0535 | Buy Now |
Part Details for 2N7002BKV
2N7002BKV CAD Models
2N7002BKV Part Data Attributes
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2N7002BKV
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
2N7002BKV
NXP Semiconductors
340mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ULTRA SMALL, PLASTIC PACKAGE-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ULTRA SMALL, PLASTIC PACKAGE-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.34 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002BKV Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002BKV is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure the 2N7002BKV is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the specified range. Additionally, the gate current (Ig) should be limited to the recommended maximum value to prevent overheating.
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The maximum current rating for the 2N7002BKV is 500mA, as specified in the datasheet. However, it's recommended to derate the current based on the operating temperature and other application-specific factors to ensure reliable operation.
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To protect the 2N7002BKV from ESD, it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in anti-static packaging and protected with ESD-sensitive device handling procedures.
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The 2N7002BKV is not recommended for high-frequency switching applications due to its relatively high gate capacitance and switching times. For high-frequency applications, a faster-switching MOSFET with lower gate capacitance is recommended.