Part Details for 2N7002BKV,115 by NXP Semiconductors
Results Overview of 2N7002BKV,115 by NXP Semiconductors
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002BKV,115 Information
2N7002BKV,115 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002BKV,115
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.34A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2040 |
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$0.0900 / $0.4500 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.34A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 53 |
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$0.1470 / $0.4900 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 0.34A, 60V, 2-Element, N-Channel,SOT6 RoHS: Compliant Status: Active Min Qty: 1 | 620 |
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$0.0458 / $0.0739 | Buy Now |
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Vyrian | Transistors | 39012 |
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RFQ |
Part Details for 2N7002BKV,115
2N7002BKV,115 CAD Models
2N7002BKV,115 Part Data Attributes
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2N7002BKV,115
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
2N7002BKV,115
NXP Semiconductors
2N7002BKV - 60 V, 340 mA dual N-channel Trench MOSFET SOT 6-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT | |
| Package Description | ULTRA SMALL, PLASTIC PACKAGE-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | SOT666 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.34 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.14 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002BKV,115
This table gives cross-reference parts and alternative options found for 2N7002BKV,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002BKV,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N7002BKV | NXP Semiconductors | Check for Price | 340mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ULTRA SMALL, PLASTIC PACKAGE-6 | 2N7002BKV,115 vs 2N7002BKV |
| 2N7002BKV | Nexperia | Check for Price | Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002BKV,115 vs 2N7002BKV |
2N7002BKV,115 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002BKV,115 is -40°C to 150°C.
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Yes, the 2N7002BKV,115 can be used as a switch for high-frequency signals up to 1 GHz due to its low capacitance and high switching speed.
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To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended bias voltage is between 1.5V and 5V.
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The maximum continuous drain current rating for the 2N7002BKV,115 is 500 mA.
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No, the 2N7002BKV,115 is not suitable for high-power applications due to its limited power dissipation capability. It is recommended for low-power, low-voltage applications.