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2N7002BKM - 60 V N-channel Trench MOSFET@en-us DFN 3-Pin
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2N7002BKM,315 by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55T7737
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Newark | Mosfet, N Channel, 60V, 0.45A, Sot883, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:450Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002BKM,315 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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NexGen Digital | 2 |
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RFQ | ||
DISTI #
2N7002BKM,315
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Avnet Silica | Transistor MOSFET NCH 60V 045A 3Pin DFN TR (Alt: 2N7002BKM,315) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 | Silica - 0 |
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Buy Now | |
DISTI #
2N7002BKM,315
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EBV Elektronik | Transistor MOSFET NCH 60V 045A 3Pin DFN TR (Alt: 2N7002BKM,315) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 638 |
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RFQ |
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2N7002BKM,315
Nexperia
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Datasheet
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2N7002BKM,315
Nexperia
2N7002BKM - 60 V N-channel Trench MOSFET@en-us DFN 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Package Description | LEADLESS, ULTRA SMALL, PLASTIC, SC-101, DFN10063-3, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT883 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.45 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the 2N7002BKM,315 is -55°C to 150°C.
Yes, the 2N7002BKM,315 is suitable for high-frequency switching applications due to its low gate charge and high switching speed.
Yes, the 2N7002BKM,315 is AEC-Q101 qualified, making it suitable for use in automotive applications.
The maximum drain-source voltage rating for the 2N7002BKM,315 is 20V.
Yes, the 2N7002BKM,315 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.