Datasheets
2N7002BKM,315 by:

2N7002BKM - 60 V N-channel Trench MOSFET@en-us DFN 3-Pin

Part Details for 2N7002BKM,315 by Nexperia

Results Overview of 2N7002BKM,315 by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

2N7002BKM,315 Information

2N7002BKM,315 by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002BKM,315

Part # Distributor Description Stock Price Buy
DISTI # 55T7737
Newark Mosfet, N Channel, 60V, 0.45A, Sot883, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:450Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002BKM,315 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
NexGen Digital   2
RFQ
DISTI # 2N7002BKM,315
Avnet Silica Transistor MOSFET NCH 60V 045A 3Pin DFN TR (Alt: 2N7002BKM,315) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Silica - 0
Buy Now
DISTI # 2N7002BKM,315
EBV Elektronik Transistor MOSFET NCH 60V 045A 3Pin DFN TR (Alt: 2N7002BKM,315) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 EBV - 0
Buy Now
Vyrian Transistors 638
RFQ

Part Details for 2N7002BKM,315

2N7002BKM,315 Part Data Attributes

2N7002BKM,315 Nexperia
Buy Now Datasheet
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2N7002BKM,315 Nexperia 2N7002BKM - 60 V N-channel Trench MOSFET@en-us DFN 3-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code DFN
Package Description LEADLESS, ULTRA SMALL, PLASTIC, SC-101, DFN10063-3, 3 PIN
Pin Count 3
Manufacturer Package Code SOT883
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.45 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

2N7002BKM,315 Related Parts

2N7002BKM,315 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002BKM,315 is -55°C to 150°C.

  • Yes, the 2N7002BKM,315 is suitable for high-frequency switching applications due to its low gate charge and high switching speed.

  • Yes, the 2N7002BKM,315 is AEC-Q101 qualified, making it suitable for use in automotive applications.

  • The maximum drain-source voltage rating for the 2N7002BKM,315 is 20V.

  • Yes, the 2N7002BKM,315 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

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