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Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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2N7002A-7 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH9624
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Newark | 2N7002 Family Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. 2N7002A-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 12000 |
|
$0.0410 / $0.0420 | Buy Now |
DISTI #
07AH5030
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Newark | Mosfet, N-Ch, 60V, 0.18A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:180Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Diodes Inc. 2N7002A-7 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9926 |
|
$0.0680 / $0.1540 | Buy Now |
DISTI #
07AH5031
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Newark | Mosfet, N-Ch, 60V, 0.18A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:180Ma, Drain Source Voltage Vds:60V, On Resistance Rds(On):3.5Ohm, Rds(On) Test Voltage Vgs:5V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Diodes Inc. 2N7002A-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0420 / $0.0440 | Buy Now |
DISTI #
2N7002A-7DICT-ND
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DigiKey | MOSFET N-CH 60V 180MA SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
79272 In Stock |
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$0.0250 / $0.1500 | Buy Now |
DISTI #
2N7002A-7
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Avnet Americas | Power MOSFET, N Channel, 60 V, 180 mA, 3.5 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: 2N7002A-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 12000 |
|
$0.0242 / $0.0247 | Buy Now |
DISTI #
07AH5030
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Avnet Americas | Power MOSFET, N Channel, 60 V, 180 mA, 3.5 ohm, SOT-23, Surface Mount - Product that comes on tape, but is not reeled (Alt: 07AH5030) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 32 Weeks, 4 Days Container: Ammo Pack | 0 |
|
$0.0710 / $0.1670 | Buy Now |
DISTI #
621-2N7002A-7
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Mouser Electronics | MOSFETs N-CHANNEL ENHANCEMENT MODE RoHS: Compliant | 68663 |
|
$0.0280 / $0.1800 | Buy Now |
DISTI #
E02:0323_01114339
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Arrow Electronics | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2414 | Europe - 3000 |
|
$0.0251 / $0.0274 | Buy Now |
DISTI #
V72:2272_06685869
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Arrow Electronics | Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 416 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2303 Container: Cut Strips | Americas - 416 |
|
$0.0260 | Buy Now |
DISTI #
70550312
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RS | N-Channel Enhancement MOSFET SOT-23 Min Qty: 150 Package Multiple: 1 Container: Bulk | 0 |
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$0.0900 | RFQ |
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2N7002A-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
2N7002A-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 32 Weeks, 4 Days | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The 2N7002A-7 is a low-power MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to 100 kHz.
To ensure the 2N7002A-7 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor of 1-10 kΩ can be used to limit the gate current.
The maximum power dissipation of the 2N7002A-7 is not explicitly stated in the datasheet. However, based on its thermal resistance (RθJA) and maximum junction temperature (Tj), the maximum power dissipation can be calculated to be around 1.5W.
The 2N7002A-7 is a low-power MOSFET with a maximum continuous drain current of 500mA. It is not suitable for high-current applications. For high-current applications, a MOSFET with a higher current rating should be used.
To protect the 2N7002A-7 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use ESD-protective packaging and materials.