Part Details for 2N7002_R1_00001 by PanJit Semiconductor
Results Overview of 2N7002_R1_00001 by PanJit Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002_R1_00001 Information
2N7002_R1_00001 by PanJit Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002_R1_00001
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 14980 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.25A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 11984 |
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$0.0400 / $0.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.25A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2000 |
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$0.0400 / $0.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.25A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 770 |
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$0.0500 / $0.0800 | Buy Now |
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Chip 1 Exchange | INSTOCK | 2582728 |
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DISTI #
2N7002_R1_00001
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Avnet Silica | SOT 23200mW60VMOSFETSMD (Alt: 2N7002_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | Silica - 0 |
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Buy Now |
Part Details for 2N7002_R1_00001
2N7002_R1_00001 CAD Models
2N7002_R1_00001 Part Data Attributes
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2N7002_R1_00001
PanJit Semiconductor
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Datasheet
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Compare Parts:
2N7002_R1_00001
PanJit Semiconductor
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.25 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002_R1_00001
This table gives cross-reference parts and alternative options found for 2N7002_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002_R2_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 2N7002_R1_00001 vs 2N7002_R2_00001 |
| SN7002WL6327HTMA1 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 2N7002_R1_00001 vs SN7002WL6327HTMA1 |
| PJC7002H_R1_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor | 2N7002_R1_00001 vs PJC7002H_R1_00001 |
| 2N7002T/R7 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | 2N7002_R1_00001 vs 2N7002T/R7 |
| 2N7002T/R13 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | 2N7002_R1_00001 vs 2N7002T/R13 |
2N7002_R1_00001 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N7002_R1_00001 is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
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To ensure proper biasing, make sure to provide a sufficient voltage supply (VGS) between the gate and source pins, typically around 2-4V, and maintain a low threshold voltage (VTH) to minimize power consumption.
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The maximum current rating for the 2N7002_R1_00001 is 500mA, although it's recommended to derate the current based on the operating temperature and other application-specific factors.
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To prevent electrostatic discharge (ESD) damage, use proper handling and storage techniques, such as using anti-static wrist straps, mats, and bags, and ensure that the device is properly grounded during assembly and testing.
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The 2N7002_R1_00001 is commonly used in low-power switching applications, such as battery-powered devices, motor control circuits, and power management systems, due to its low threshold voltage and high current capability.