Part Details for 2N7002 by Zetex / Diodes Inc
Results Overview of 2N7002 by Zetex / Diodes Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002 Information
2N7002 by Zetex / Diodes Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 720 |
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RFQ |
Part Details for 2N7002
2N7002 CAD Models
2N7002 Part Data Attributes
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2N7002
Zetex / Diodes Inc
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Datasheet
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2N7002
Zetex / Diodes Inc
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ZETEX PLC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002
This table gives cross-reference parts and alternative options found for 2N7002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002T/R | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002 vs 2N7002T/R |
| 2N7002 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002 |
| 2N7002KA | KEC | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002 vs 2N7002KA |
| 2N7002LT1 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | 2N7002 vs 2N7002LT1 |
| 2N7002/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002/T3 |
| 2N7002T | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | 2N7002 vs 2N7002T |
| 2N7002LT1H | onsemi | Check for Price | 75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 2N7002 vs 2N7002LT1H |
| 2N7002KA | NXP Semiconductors | Check for Price | TRANSISTOR 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002KA |
| 2N7002TA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002TA |
| 2N7002T/R | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002 vs 2N7002T/R |
2N7002 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the 2N7002 is not explicitly stated in the datasheet. However, it is generally recommended to limit the drain-source voltage (Vds) to 20V and the drain current (Id) to 500mA to ensure safe operation.
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To ensure the 2N7002 is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V and a drain-source voltage (Vds) of less than 0.5V. This will result in a low drain-source resistance (Rds(on)) and maximum current handling capability.
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The thermal resistance (RθJA) of the 2N7002 is typically around 200°C/W for the SOT-23 package. This means that for every watt of power dissipated, the junction temperature will increase by 200°C above the ambient temperature.
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While the 2N7002 can be used as a switch, it is not suitable for high-frequency circuits due to its relatively high gate-source capacitance (Cgs) and gate-drain capacitance (Cgd). This can lead to significant switching losses and reduced efficiency. For high-frequency applications, consider using a MOSFET with lower capacitance values.
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To protect the 2N7002 from electrostatic discharge (ESD), handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Also, ensure that the device is stored in an anti-static package and that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.