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Part Details for 2N7002 by Vishay Intertechnologies
Results Overview of 2N7002 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002 Information
2N7002 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94B6474
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Newark | N Channel Mosfet, 60V, 115Ma To-236, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:115Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: No |Vishay 2N7002 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236AB | 710 |
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$0.0600 / $0.2000 | Buy Now |
Part Details for 2N7002
2N7002 CAD Models
2N7002 Part Data Attributes
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2N7002
Vishay Intertechnologies
Buy Now
Datasheet
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2N7002
Vishay Intertechnologies
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002 Frequently Asked Questions (FAQ)
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The 2N7002 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure the 2N7002 is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will minimize the on-state resistance (Rds(on)).
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The maximum continuous drain current (Id) rating for the 2N7002 is 500mA. However, it's essential to consider the power dissipation and thermal management to ensure reliable operation.
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While the 2N7002 can be used in high-frequency circuits, its switching speed is limited. The turn-on and turn-off times are around 10ns and 20ns, respectively. For high-frequency applications, consider using a faster switching device.
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To protect the 2N7002 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag. Also, ensure the PCB design includes ESD protection components, such as TVS diodes or resistors.