Part Details for 2N7002 by Supertex Inc
Results Overview of 2N7002 by Supertex Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
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Automotive
2N7002 Information
2N7002 by Supertex Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 6000 |
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RFQ |
Part Details for 2N7002
2N7002 CAD Models
2N7002 Part Data Attributes
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2N7002
Supertex Inc
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Datasheet
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2N7002
Supertex Inc
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | SOT-23 | |
| Package Description | SAME AS SOT-23, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002
This table gives cross-reference parts and alternative options found for 2N7002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N7002 | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002 vs 2N7002 |
| 2N7002T/R | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002 vs 2N7002T/R |
| 2N7002 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002 |
| 2N7002KA | KEC | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002 vs 2N7002KA |
| 2N7002LT1 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | 2N7002 vs 2N7002LT1 |
| 2N7002/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002/T3 |
| 2N7002T | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | 2N7002 vs 2N7002T |
| 2N7002LT1H | onsemi | Check for Price | 75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 2N7002 vs 2N7002LT1H |
| 2N7002KA | NXP Semiconductors | Check for Price | TRANSISTOR 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002KA |
| 2N7002TA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002TA |
2N7002 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure the 2N7002 is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will result in a low drain-source resistance (Rds(on)) and maximum current flow.
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The maximum current rating for the 2N7002 is 1.5A, but it's recommended to operate within 1A for continuous operation to ensure reliability and prevent overheating.
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Yes, the 2N7002 can be used as a switch for high-frequency applications up to 100 kHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and oscillations.
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To protect the 2N7002 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB has proper ESD protection circuits, such as TVS diodes or resistors, to prevent damage from static electricity.