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200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002 by STMicroelectronics is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1798 |
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RFQ | ||
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Bristol Electronics | 369 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 12000 |
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RFQ |
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2N7002
STMicroelectronics
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Datasheet
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2N7002
STMicroelectronics
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | LOW THRESHOLD | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 5.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.35 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N7002 | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002 vs 2N7002 |
2N7002T/R | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002 vs 2N7002T/R |
2N7002 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002 |
2N7002KA | KEC | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002 vs 2N7002KA |
2N7002LT1 | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | 2N7002 vs 2N7002LT1 |
2N7002/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002/T3 |
2N7002T | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | 2N7002 vs 2N7002T |
2N7002LT1H | onsemi | Check for Price | 75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 2N7002 vs 2N7002LT1H |
2N7002KA | NXP Semiconductors | Check for Price | TRANSISTOR 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002KA |
2N7002TA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002TA |
The 2N7002 is a low-power, low-voltage N-channel MOSFET, and it's not designed for high-frequency operation. However, it can be used in switching applications up to 100 kHz.
To ensure the 2N7002 is fully turned on, you should apply a gate-source voltage (Vgs) of at least 4.5V, and the gate current should be limited to 10mA or less to prevent overheating.
The maximum power dissipation of the 2N7002 is 1.4W at a junction temperature of 25°C. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.
While the 2N7002 can handle up to 1.5A of continuous drain current, it's not suitable for high-current applications due to its relatively high on-state resistance (Rds(on)) of 2.5Ω. For high-current applications, consider using a MOSFET with a lower Rds(on) value.
To protect the 2N7002 from ESD, handle the device by the body, not the leads. Use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. You can also use ESD protection devices, such as TVS diodes, in your circuit design.